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BLF7G20LS-200
Power LDMOS transistor
1. Product profile
1.1 General description200 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1990 MHz.
[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications RF power amplifiers for W-CDMA base stations and multi-carrier applications in the
1805 MHz to 1990 MHz frequency range
BLF7G20L-200;
BLF7G20LS-200
Power LDMOS transistor
Rev. 4 — 22 July 2011 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
2-carrier W-CDMA 1805to 1880 1620 28 55 18 33 29 [1]
NXP Semiconductors BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
2. Pinning information[1] Connected to flange
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
BLF7G20L-200 (SOT502A)
BLF7G20LS-200 (SOT502B)
Table 3. Ordering informationBLF7G20L-200 - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF7G20LS-200 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C junction temperature - 225 C
Table 5. Thermal characteristicsRth(j-c) thermal resistance from junction to case Tcase =80 C; PL =55W;
VDS =28V; IDq= 1620 mA
0.27 K/W
NXP Semiconductors BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operationThe BLF7G20L-200 and BLF7G20LS-200 are capable of withstanding a load mismatch
corresponding to VSWR=10: 1 through all phases under the following conditions:
VDS =30V; IDq =1620mA; PL= 185W (CW); f= 1805 MHz to 1880 MHz.
Table 6. CharacteristicsTj = 25 C unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 150 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; VDS=28V --4.2 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V 50.6 - A
IGSS gate leakage current VGS =11V; VDS =0V 420 2.44 420 nA
gfs forward transconductance VDS =10V; ID= 7.5A - 18.6 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =5.25A
-0.093-
Table 7. Functional test informationMode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 PDPCH; f1= 1807.5 MHz; f2= 1812.5 MHz; f3= 1872.5 MHz; f4= 1877.5 MHz; performance at VDS =28V; IDq= 1620 mA; Tcase =25 C; unless otherwise specified; in a
class-AB production test circuit.
PL(AV) average output power - 55 - W power gain PL(AV) =55W 17 18 - dB
RLin input return loss PL(AV) =55W - - 10 dB drain efficiency PL(AV) =55W 30 33 - %
ACPR adjacent channel power ratio PL(AV) =55W - 29 - dBc
NXP Semiconductors BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
7.2 1 Tone CWNXP Semiconductors BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
7.3 1-carrier W-CDMANXP Semiconductors BLF7G20L-200; BLF7G20LS-200
Power LDMOS transistor
7.4 2-carrier W-CDMA
