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BLF7G20LS-140P
Power LDMOS transistor
1. Product profile
1.1 General description140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2000 MHz frequency range
BLF7G20LS-140P
Power LDMOS transistor
Rev. 2 — 17 August 2010 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. 1805to 1880 850 28 125 17 54 - - -
GSM EDGE 1805to 1880 850 28 60 17.5 41 −61 −75 2.7
NXP Semiconductors BLF7G20LS-140P
Power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning1drain1
2drain2
3gate1
4gate2
5source [1]
Table 3. Ordering informationBLF7G20LS-140P- earless flanged LDMOST ceramic package; 4 leads SOT1121B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
Tstg storage temperature −65 +150 °C junction temperature - 200 °C
Table 5. Thermal characteristicsRth(j-c) thermal resistance from junction to case Tcase =80 °C; PL= 100W 0.41 K/W
NXP Semiconductors BLF7G20LS-140P
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operationThe BLF7G20LS-140P is capable of withstanding a load mismatch corresponding to
VSWR= 10 : 1 through all phases under the following conditions: VDS =28V;
IDq =850 mA; PL= 140W (CW); f= 1805 MHz.
Table 6. CharacteristicsTj = 25 °C; per section unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.9 mA 65 - - V
VGS(th) gate-source threshold voltage VDS= 10 V; ID=90 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; VDS =28V - - 2 μA
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V - - A
IGSS gate leakage current VGS =11V; VDS=0V - - 200 nA
gfs forward transconductance VDS =10V; ID =2.5A - 6.45 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =3.15A
-0.15 - Ω
Table 7. Application informationf = 1805 MHz and 1880 MHz; RF performance at VDS = 28 V; IDq= 850 mA; Tcase = 25 °C; sections combined unless otherwise specified; in a class-AB production test circuit.
Mode of operation: GSM EDGE; PL(AV) = 60 W power gain 16.3 17.5 - dB
RLin input return loss - −15 −8dB drain efficiency 37 41 - %
ACPR400k adjacent channel power ratio (400 kHz) - −61 −56.5 dBc
ACPR600k adjacent channel power ratio (600 kHz) - −75 −69.5 dBc
EVMrms RMS EDGE signal distortion error - 2.7 4.0 %
EVMM peak EDGE signal distortion error - 8.5 12.5 %
Mode of operation: CW; PL(AV) = 125 W power gain 16 17 - dB drain efficiency 48 54 - %
NXP Semiconductors BLF7G20LS-140P
Power LDMOS transistor
7.2 One-tone CW
7.3 Two-tone CW
NXP Semiconductors BLF7G20LS-140P
Power LDMOS transistor
7.4 GSM EDGENXP Semiconductors BLF7G20LS-140P
Power LDMOS transistor
7.5 Single carrier IS-95Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8- 13).
PAR= 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
NXP Semiconductors BLF7G20LS-140P
Power LDMOS transistor
7.6 Single carrier W-CDMA3GPP; test model 1; 64 DPCH; PAR= 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
7.7 Test circuit[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] TDK or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
Table 8. List of componentsFor test circuit see Figure 12.
C1, C2, C3 multilayer ceramic chip capacitor 24pF [1]
C4, C5 multilayer ceramic chip capacitor 4.7 μF [2]
C6, C7, C8 multilayer ceramic chip capacitor 11pF [3]
C9, C10 multilayer ceramic chip capacitor 10 μF [2]
C11 electrolytic capacitor 470 μF; 63 V
R1, R2 SMD resistor 12Ω Philips 1206
