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BLF7G10L-250
Power LDMOS transistor
1. Product profile
1.1 General description250 W LDMOS power transistor for base station applications at frequencies from
869MHz to 960MHz.
[1] In a common source class-AB application test circuit.
[2] In a common source class-AB production test circuit.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (869 MHz to 960 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use (input and output) Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the
869 MHz to 960 MHz frequency range
BLF7G10L-250;
BLF7G10LS-250
Power LDMOS transistor
Rev. 4 — 13 September 2012 Product data sheet
Table 1. Typical performanceTest signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C.
2-carrier W-CDMA 869to 894 [1] 1800 30 60 19.5 27.4 35.6
2-carrier W-CDMA 920to 960 [2] 1800 30 60 19.5 30.5 34
NXP Semiconductors BLF7G10L-250; BLF7G10LS-250
Power LDMOS transistor
2. Pinning information[1] Connected to flange
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
BLF7G10L-250 (SOT502A)
BLF7G10LS-250 (SOT502B)
Table 3. Ordering informationBLF7G10L-250 - flanged ceramic package; 2 mounting holes; 2 leads SOT502A
BLF7G10LS-250 - earless flanged ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C junction temperature - 200 C
Table 5. Thermal characteristicsRth(j-c) thermal resistance from junction to case Tcase =80 C; PL =60 W (CW);
VDS =30V; IDq= 1800 mA
0.38 K/W
NXP Semiconductors BLF7G10L-250; BLF7G10LS-250
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operationThe BLF7G10L-250 and BLF7G10LS-250 are capable of withstanding a load mismatch
corresponding to VSWR=10: 1 through all phases under the following conditions:
VDS =30V; IDq =1800mA; PL= 200W (CW); f= 920 MHz to 960 MHz.
7.2 Impedance information
Table 6. DC characteristicsTj = 25 C unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =3.3 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 330 mA 1.50 1.9 2.30 V
IDSS drain leakage current VGS =0V; VDS=28V --5 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
-56 - A
IGSS gate leakage current VGS =11V; VDS=0V --0.5 mA
gfs forward transconductance VDS =10V; ID= 11.55A - 22 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; = 11.55A
-57 - m
Table 7. RF characteristicsTest signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 64 DPCH; f1= 920 MHz; f2= 925 MHz; f3= 955 MHz; f4= 960 MHz; performance at VDS =30V; IDq= 1800 mA; Tcase =25 C; unless otherwise specified; in a
class-AB production test circuit. power gain PL(AV) =60W 18.5 19.5 - dB
RLin input return loss PL(AV) =60W - 15.5 10 dB drain efficiency PL(AV) =60W 27 30.5 - %
ACPR adjacent channel power ratio PL(AV) =60W - 34 31 dBc
Table 8. Typical impedance informationIDq= 1800 mA; main transistor VDS =30V.ZS and ZL defined in Figure1.
925 3.1 j3.3 1.0 j1.7
942 3.2 j3.3 1.0 j1.6
960 3.4 j3.5 0.9 j1.4
NXP Semiconductors BLF7G10L-250; BLF7G10LS-250
Power LDMOS transistor
7.3 Circuit
Table 9. List of componentsSee Figure 2 for component layout.
C1, C2, C3, C4, C5, C6 multilayer ceramic chip capacitor 82 pF ATC800B
C7, C9, C12, C14 multilayer ceramic chip capacitor 10 F Murata
C8, C10, C11, C13 multilayer ceramic chip capacitor 1 F Murata
C15, C16 electrolytic capacitor 470 F, 63V
NXP Semiconductors BLF7G10L-250; BLF7G10LS-250
Power LDMOS transistor
7.4 Graphs
7.4.1 CW pulsedNXP Semiconductors BLF7G10L-250; BLF7G10LS-250
Power LDMOS transistor
7.4.2 2-Carrier W-CDMA NXP Semiconductors BLF7G10L-250; BLF7G10LS-250
Power LDMOS transistor
