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BLF6G38LS-50
WiMAX power LDMOS transistor
1. Product profile
1.1 General descriptionW LDMOS power transistor for base station applications at frequencies from
3400 MHzto 3800 MHz.
[1] PL(M) stands for peak output power.
[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.23 MHz.
[3] Measured within 30 kHz bandwidth.
1.2 Features and benefits Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
synchronization and 6 traffic channels [Walsh codes 8- 13]. PAR = 9.7 dB at 0.01 %
probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a
power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W: Qualified up to a maximum VDS operation of 32 V Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation Internally matched for ease of use Low gold plating thickness on leads Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 02 — 1 June 2010 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase =25 °C in a class-AB production test circuit.
1-carrier N-CDMA[2] 3400to 3600 28 9 70 14 23 −49[3] −64[3]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
1.3 Applications RF power amplifiers for base stations and multicarrier applications in the
3400 MHzto 3800 MHz frequency range
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
BLF6G38-50 (SOT502A)1drain
2gate
3source [1]
BLF6G38LS-50 (SOT502B)1drain
2gate
3source [1]
Table 3. Ordering informationBLF6G38-50 - flanged ceramic package; 2 mounting holes; 2 leads SOT502A
BLF6G38LS-50 - earless flanged ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V drain current - 16.5 A
Tstg storage temperature −65 +150 °C junction temperature - 200 °C
NXP Semiconductors BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operationThe BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =450 mA; PL =PL(1dB); f= 3600 MHz.
Table 5. Thermal characteristicsRth(j-case) thermal resistance from
junction to case
Tcase =80 °C; =50W
BLF6G38-50 0.9 -
BLF6G38LS-50 0.7 -
Table 6. CharacteristicsTj = 25 °C per section; unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.4 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID =80 mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0V; VDS =28V - - 2.8 μA
IDSX drain cut-off current VGS =VGS(th) +3.75V;
VDS =10V
11.8 16.4 - A
IGSS gate leakage current VGS =+11 V; VDS=0V - - 280 nA
gfs forward transconductance VDS =10V; ID =2.8A - 5.6 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) +3.75 V; =2.8A 0.18 0.29 Ω
Crs feedback capacitance VGS = 0 V; VDS =28V; 1MHz
-1.17 - pF
Table 7. Application informationMode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic
channels (Walsh codes 8- 13). PAR= 9.7 dB at 0.01% probability on the CCDF; Channel
bandwidth is 1.23 MHz; f1 =3400MHz; f2= 3500 MHz; f3= 3600 MHz; RF performance at
VDS =28V; IDq =450 mA; Tcase =25 °C; unless otherwise specified, in a class-AB production
circuit.
PL(M) peak output power PL(AV) =9W 65 70 - W power gain PL(AV)=9W 12.5 14 - dB
RLin input return loss PL(AV) =9W - −10- dB drain efficiency PL(AV) =9W 20 23 - %
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) =9W [1] −46 −49- dBc
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) =9W [1] −62 −64- dBc
NXP Semiconductors BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal descriptionFrame duration = 5 ms; bandwidth = 10 MHz; sequency=1 frame;
frequency band= WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT= 1024; zone type= PUSC; δ = 97.7 %; number of symbols = 46;
numberof subchannels= 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB.
7.2.2 Graphs
Table 8. Frame structureZone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit
Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit
Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit
NXP Semiconductors BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 GraphsNXP Semiconductors BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistorNXP Semiconductors BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
8. Test information[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] Vishay VJ1206Y104KXB or capacitor of same quality.
[3] TDK C5750X7R1H106M or capacitor of same quality.
Table 9. List of componentsFor test circuit, see Figure 10.
C1, C4, C5, C6 multilayer ceramic chip capacitor 10 pF [1] multilayer ceramic chip capacitor 0.7 pF [1]
C3, C8, C9 multilayer ceramic chip capacitor 100 nF [2] multilayer ceramic chip capacitor 10 μF; 50 V [3]
C10 electrolytic capacitor 470 μF; 63 V
R1, R2 SMD resistor 9.1 Ω ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent
Table 10. Measured test circuit impedances3.4 5.48 − j9.38 12.42 − j4.58
3.5 5.39 − j9.43 10.41 − j5.31
3.6 5.55 − j9.15 14.31 − j7.04
3.8 9.60 − j12.48 17.70 − j11.57
