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BLF6G38-25
WiMAX power LDMOS transistor
1. Product profile
1.1 General descriptionW LDMOS power transistor for base station applications at frequencies from
3400 MHzto 3800 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features and benefits Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8- 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA: Average output power= 4.5W Power gain=15 dB Drain efficiency=24% ACPR885k = 45 dBc in 30 kHz bandwidth Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (3400 MHzto 3800 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for base stations and multicarrier applications in the
3400 MHzto 3800 MHz frequency range
BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
Rev. 3 — 11 March 2013 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase =25 C in a class-AB production test circuit.
1-carrier N-CDMA[1] 3400to 3600 28 4.5 15 24 45[2] 61[2]
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
BLF6G38-25 (SOT608A)
BLF6G38S-25 (SOT608B)
Table 3. Ordering informationBLF6G38-25 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A
BLF6G38S-25 - ceramic earless flanged package; 2 leads SOT608B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 8.2 A
Tstg storage temperature 65 +150 C junction temperature - 200 C
Table 5. Thermal characteristicsRth(j-case) thermal resistance from
junction to case
Tcase =80 C; =25W
BLF6G38-25 1.8 - K/W
BLF6G38S-25 1.8 - K/W
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
6. Characteristics
7. Application information[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operationThe BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =225 mA; PL =PL(1dB); f= 3600 MHz.
Table 6. Characteristics =25 C unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0 V; ID =0.4 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID =40mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0 V; VDS=28V --1.5 A
IDSX drain cut-off current VGS =VGS(th)+ 3.75V;
VDS =10V
68.2 - A
IGSS gate leakage current VGS =+11 V; VDS=0V - - 150 nA
gfs forward transconductance VDS =10 V; ID =1.4A - 2.8 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) +3.75 V; =1.4A 0.37 0.58
Crs feedback capacitance VGS = 0 V; VDS =28V; 1MHz
-0.59 - pF
Table 7. Application informationMode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8- 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel
bandwidth is 1.2288 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at
VDS =28V; IDq =225 mA; Tcase =25 C; unless otherwise specified, in a class-AB production
circuit. power gain PL(AV)= 4.5W 12.5 15 - dB
RLin input return loss PL(AV) =4.5W - 10- dB drain efficiency PL(AV) =4.5W 22 24 - %
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) =4.5W [1]- 45 40 dBc
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) =4.5W [1]- 61 56 dBc
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal descriptionframe duration = 5 ms; bandwidth = 10 MHz; sequency=1 frame;
frequency band= WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT= 1024; zone type= PUSC; = 97.7 %; number of symbols = 46;
numberof subchannels= 30; PAR = 9.5 dB.
Preamble: 1 symbol 30 subchannels; PL = PL(nom) + 3.86 dB
7.2.2 Graphs
Table 8. Frame structureZone 0 FCH 2 symbols 4 subchannels QPSK1/2 3
Zone 0 data 2 symbols 26 subchannels 64QAM3/4 692
Zone 0 data 44 symbols 30 subchannels 64QAM3/4 10000
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 GraphsNXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
NXP Semiconductors BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
8. Test information
