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BLF6G27-45-BLF6G27S-45
WiMAX power LDMOS transistor
1. Product profile
1.1 General description W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features and benefits Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and IDqof 350 mA: Qualified up to a maximum VDS operation of 32 V Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation Internally matched for ease of use Low gold plating thickness on leads Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
Rev. 4 — 7 March 2013 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 C in a class-AB production test circuit.
1-carrier N-CDMA[1] 2500 to 2700 28 7 18 24 49[2] 64[2]
NXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
1.3 Applications RF power amplifiers for base stations and multi carrier applications in the
2500 MHzto 2700 MHz frequency range
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
BLF6G27-45 (SOT608A)
BLF6G27S-45 (SOT608B)
Table 3. Ordering informationBLF6G27-45 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A
BLF6G27S-45 - ceramic earless flanged package; 2 leads SOT608B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 20 A
Tstg storage temperature 65 +150 C junction temperature - 200 C
NXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operationThe BLF6G27-45 and BLF6G27S-45 are capable of withstanding a load mismatch
corresponding to VSWR=10: 1 through all phases under the following conditions:
VDS =28V; IDq =350 mA; PL = 45 W (CW); f = 2600 MHz.
Table 5. Thermal characteristicsRth(j-case) thermal resistance from
junction to case
Tcase =80 C; = 34 W (CW)
BLF6G27-45 1.7 K/W
BLF6G27S-45 1.7 K/W
Table 6. CharacteristicsTj = 25 C per section; unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.5 mA 65 --V
VGS(th) gate-source threshold voltage VDS =10 V; ID =60mA 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; VDS=28V --1.4 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
8.8 10.4 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 140 nA
gfs forward transconductance VDS =10V; ID =2.5A - 4.3 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V; =2.1A 0.24 0.385
Crs feedback capacitance VGS =0V; VDS =28V;
f=1MHz
-1.1 -pF
Table 7. Application informationMode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; channel bandwidth = 1.23 MHz; = 2700 MHz; RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 C; unless otherwise
specified; in a class-AB production circuit.
PL(AV) average output power - 7 - W power gain PL(AV) = 7 W 16.5 18 - dB
RLin input return loss PL(AV) = 7 W - 10 5dB drain efficiency PL(AV) = 7 W 22 24 - %
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) = 7 W [1]- 49 46 dBc
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 7 W [1]- 64 61 dBc
NXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
7.2 Single carrier N-CDMA performanceNXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
7.3 Two-toneNXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
7.4 Continuous waveNXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
7.5 Single carrier N-CDMA broadband performance at 7 W averageNXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
7.6 Single carrier N-CDMA broadband performance at 20 W averageNXP Semiconductors BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
8. Test information
