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BLF6G27-10-BLF6G27-10G
WiMAX power LDMOS transistor
1. Product profile
1.1 General description W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13).
PAR=9.7dBat 0.01% probabilityon CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features and benefits Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and IDqof 130 mA: Qualified up to a maximum VDS operation of 32 V Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation Internally matched for ease of use Low gold plating thickness on leads Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for base stations and multi carrier applications in the
2300 MHzto 2400 MHz and 2500 MHzto 2700 MHz frequency range.
BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Rev. 3 — 28 February 2011 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 °C in a class-AB production test circuit.
1-carrier N-CDMA[1] 2500 to 2700 28 2 19 20 −49[2] −64[2]
IS-95 2300 to 2400 28 2 22.5 24.8 −47[2] −64[2]
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
BLF6G27-10 (SOT975B)1drain
2gate
3source [1]
BLF6G27-10G (SOT975C)1drain
2gate
3source [1]
Table 3. Ordering informationBLF6G27-10 - earless flanged ceramic package; 2 leads SOT975B
BLF6G27-10G- earless flanged ceramic package; 2 leads SOT975C
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V drain current - 3.5 A
Tstg storage temperature −65 +150 °C junction temperature - 225 °C
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operationThe BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch
corresponding to VSWR=10: 1 through all phases under the following conditions:
VDS =28V; IDq =130 mA; PL = PL(1dB); f = 2700 MHz.
Table 5. Thermal characteristicsRth(j-case) thermal resistance from
junction to case
Tcase =80 °C; = 10 W (CW)
BLF6G27-10 4.0 K/W
BLF6G27-10G 4.0 K/W
Table 6. CharacteristicsTj = 25 °C per section; unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.18 mA 65 --V
VGS(th) gate-source threshold voltage VDS =10 V; ID =18mA 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; VDS=28V --1.4 μA
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
2.7 --A
IGSS gate leakage current VGS =11V; VDS=0V - - 140 nA
gfs forward transconductance VDS =10V; ID= 0.9A 0.8 - - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V; =0.6A
328 - 1256 mΩ
Crs feedback capacitance VGS =0V; VDS =28V;
f=1MHz
-3.6 -pF
Table 7. Application informationMode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz; = 2500 MHz; f2= 2600 MHz; f3= 2700 MHz; RF performance at VDS = 28 V; IDq = 130 mA;
Tcase =25 °C; unless otherwise specified; in a class-AB production circuit.
PL(AV) average output power - 2 - W power gain PL(AV) =2W 17.5 19 - dB
RLin input return loss PL(AV) =2W - −10- dB drain efficiency PL(AV) =2W 18 20 - %
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) =2W [1]- −49 −46 dBc
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) =2W [1]- −64 −61 dBc
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal descriptionframe duration = 5 ms; bandwidth = 10 MHz; sequency=1 frame;
frequency band= WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT= 1024; zone type= PUSC; δ = 97.7 %; number of symbols = 46;
numberof subchannels= 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB.
7.2.2 Graphs
Table 8. Frame structureZone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit
Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit
Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
7.3 Single carrier NA IS-95 broadband performance at 2 W average
7.3.1 GraphsNXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistorNXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
8. Test informationNXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Table 9. List of componentsFor test circuit, see Figure 10 and Figure 11.
C1, C3, C5, C7 multilayer ceramic chip capacitor 22 pF ATC 100A multilayer ceramic chip capacitor 1.5 μFTDK multilayer ceramic chip capacitor 1.6 pF ATC 100A multilayer ceramic chip capacitor 10 μF; 50 V TDK electrolytic capacitor 220 μF; 63 V Elco ferrite SMD bead - Ferroxcube bead
R1, R2 SMD resistor 8.2 Ω Thin film
