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BLF6G22LS-180RN
Power LDMOS transistor
Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, supply voltage of 30 V and an IDq of 1400 mA: Average output power=40W Power gain= 16.0 dB Efficiency= 25 % IMD3= −38 dBc ACPR= −42 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use
BLF6G22-180RN;
BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01 — 20 November 2008 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 °C in a class-AB production test circuit.
2-carrier W-CDMA 2110to 2170 30 40 16.0 25 −38[1] −42[1]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLF6G22(LS)-180RN
Power LDMOS transistor Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 2000 MHz to 2200 MHz frequency range
Pinning information[1] Connected to flange.
Ordering information Limiting values
Table 2. Pinning
BLF6G22-180RN (SOT502A) drain gate source [1]
BLF6G22LS-180RN (SOT502B) drain gate source [1]
sym112
sym112
Table 3. Ordering informationBLF6G22-180RN - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF6G22LS-180RN- earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V drain current - 49 A
Tstg storage temperature −65 +150 °C junction temperature - 225 °C
NXP Semiconductors BLF6G22(LS)-180RN
Power LDMOS transistor Thermal characteristics Characteristics Application information
7.1 Ruggedness in class-AB operationThe BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load
mismatch corresponding to VSWR= 10 : 1 through all phases under the following
conditions: VDS=30 V; IDq= 1400 mA; PL= 180W (CW); f= 2170 MHz.
Table 5. Thermal characteristicsRth(j-case) thermal resistance from
junction to case
Tcase =80 °C; =40W
BLF6G22-180RN 0.50 K/W
BLF6G22LS-180RN 0.37 K/W
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.9 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V;ID= 270 mA 1.4 2.0 2.4 V
VGSq gate-source quiescent voltage VDS= 28 V; ID= 1.62A 1.5 2.0 2.5 V
IDSS drain leakage current VGS =0V; VDS =28V - - 5 μA
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V 45 - A
IGSS gate leakage current VGS=13 V; VDS=0V - - 450 nA
gfs forward transconductance VDS =10V; ID= 13.5A - 19.5 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V;= 9.45A 0.06 - Ω
Crs feedback capacitance VGS =0V; VDS =30V;
f= 1MHz 3.3 - pF
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR = 7 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 PDPCH; f1= 2112.5 MHz; f2= 2122.5 MHz; f3= 2157.5 MHz; f4= 2167.5 MHz; performance at VDS =30V; IDq= 1400 mA; Tcase =25 °C; unless otherwise specified; in a
class-AB production test circuit.
PL(AV) average output power - 40 - W power gain PL(AV)=40W 15.0 16.0- dB
RLin input return loss PL(AV) =40W - −11 −8dB drain efficiency PL(AV) =40W 22 25 - %
IMD3 third order intermodulation distortion PL(AV) =40W - −38 −34.5 dBc
ACPR adjacent channel power ratio PL(AV) =40W - −42 −39 dBc
NXP Semiconductors BLF6G22(LS)-180RN
Power LDMOS transistor
7.2 One-tone CW
7.3 Two-tone CW
NXP Semiconductors BLF6G22(LS)-180RN
Power LDMOS transistor
7.4 2-carrier W-CDMA Test information
NXP Semiconductors BLF6G22(LS)-180RN
Power LDMOS transistor[1] Solder vertically.
Table 8. List of components (see Figure 6 and Figure7)The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with εr = 3.5 and thickness = 0.76 mm.
C1, C3, C12, C13 multilayer ceramic chip capacitor 13 pF [1] ATC 100B or capacitor of same quality multilayer ceramic chip capacitor 1.4 pF [1] ATC 100B or capacitor of same quality
C4, C5, C14, C17 multilayer ceramic chip capacitor 220 nF Vishay or capacitor of same quality
C6, C7 multilayer ceramic chip capacitor 100 nF Vishay or capacitor of same quality multilayer ceramic chip capacitor 10μF multilayer ceramic chip capacitor 12 pF [1] ATC 100B or capacitor of same quality
C10 multilayer ceramic chip capacitor 1.1 pF [1] ATC 100B or capacitor of same quality
C11 multilayer ceramic chip capacitor 0.7 pF [1] ATC 100B or capacitor of same quality
C15, C18 multilayer ceramic chip capacitor 1.5μF
C16, C19 multilayer ceramic chip capacitor 10 μF; 50 V TDK or capacitor of same quality
C20 electrolytic capacitor 220 μF; 63 V ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent SMD resistor 2.7Ω
R2, R3 SMD resistor 6.8Ω
