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BLF6G22LS-130
Power LDMOS transistor
Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing10 MHz.
1.2 Features Typical 2-carrier W-CDMA performanceat frequenciesof 2110 MHz and 2170 MHz,a
supply voltage of 28 V and an IDq of 1100 mA: Average output power=30W Power gain=17 dB (typ) Efficiency= 28.5% IMD3= −37 dBc ACPR= −40 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-130
Power LDMOS transistor
Rev. 01 — 23 May 2008 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 °C in a common source class-AB production test circuit.
2-carrier W-CDMA 2110 to 2170 28 30 17 28.5 −37[1] −40[1]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
1.3 Applications RF power amplifiers W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
Pinning information[1] Connected to flange.
Ordering information Limiting values Thermal characteristics
Table 2. Pinning drain gate source [1] 3
sym112
Table 3. Ordering informationBLF6G22LS-130 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V drain current - 34 A
Tstg storage temperature −65 +150 °C junction temperature - 225 °C
Table 5. Thermal characteristicsRth(j-case) thermal resistance from junction to case Tcase =80 °C; PL=30W 0.43 K/W
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor Characteristics Application information
7.1 Ruggedness in class-AB operationThe BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to
VSWR=10: 1 through all phases under the following conditions: VDS =28V;
IDq= 1100 mA; PL= 130W (CW); f= 2170 MHz.
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V;ID= 180 mA 1.4 1.9 2.4 V
VGSq gate-source quiescent voltage VDS= 28 V;= 1100 mA
1.6 2.1 2.6 V
IDSS drain leakage current VGS =0V; VDS =28V - - 5 μA
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V
26.5 34 - A
IGSS gate leakage current VGS=11 V; VDS=0V - - 450 nA
gfs forward transconductance VDS =10V; ID =9A - 12 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V;= 6.3A 0.085 0.135 Ω
Crs feedback capacitance VGS =0V; VDS =28V;
f= 1MHz 3.15 - pF
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4= 2167.5 MHz; performance at VDS = 28 V; IDq = 1100 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
PL(AV) average output power - 30 - W power gain PL(AV) = 30 W 16 17 - dB
RLin input return loss PL(AV) = 30 W - −9 −6dB drain efficiency PL(AV) = 30 W 25.5 28.5 - %
IMD3 third order intermodulation distortion PL(AV) = 30 W - −37 −34.5 dBc
ACPR adjacent channel power ratio PL(AV) = 30 W - −40 −38 dBc
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
7.2 One-tone CW
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
7.3 Two-tone CW
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
7.4 2-carrier W-CDMA
