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BLF6G22L-40BN
Power LDMOS transistor
1. Product profile
1.1 General description W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR=8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing5 MHz
1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 345 mA: Average output power= 2.5W Power gain=19 dB (typ) Efficiency=16% ACPR= −50 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Integrated current sense Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22L-40BN
Power LDMOS transistor
Rev. 1 — 30 August 2010 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 °C in a common source class-AB production test circuit.
2-carrier W-CDMA 2110 to 2170 28 2.5 19 16 −50[1]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLF6G22L-40BN
Power LDMOS transistor
1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning1drain
2gate
3source [1]
4, 5 sense drain
6, 7 sense gate
Table 3. Ordering informationBLF6G22L-40BN - flanged ceramic package; 2 mounting holes; 6 leads SOT1112A
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
VGS(sense) sense gate-source voltage −0.5 +9 V
Tstg storage temperature −65 +150 °C junction temperature - 200 °C
Table 5. Thermal characteristicsRth(j-case) thermal resistance from junction to case Tcase =80 °C; PL= 12.5W (CW) 1.7 K/W
NXP Semiconductors BLF6G22L-40BN
Power LDMOS transistor
6. Characteristics
7. Test information[1] Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; f = 2167.5 MHz.
7.1 Ruggedness in class-AB operationThe BLF6G22L-40BN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq =345 mA; PL = 40 W (CW); f = 2140 MHz.
Table 6. CharacteristicsTj = 25 °C per section; unless otherwise specified
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.5 mA 65 --V
VGS(th) gate-source threshold voltage VDS =10 V; ID =59mA 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; VDS=28V --1.5 μA
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
8.8 10 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 150 nA
gfs forward transconductance VDS =10V; ID =2.9A - 4.3 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V; =2.1A
-0.25 - Ω
IDq quiescent drain current main transistor:
VDS =28 V
sense transistor:
IDS = 7.43mA;
VDS =26.7V
310 345 380 mA
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; performance at VDS = 28 V; IDq = 345 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit power gain PL(AV) = 2.5 W 17.8 19 21.0 dB drain efficiency PL(AV) = 2.5 W 13 16 - %
ACPR adjacent channel power ratio PL(AV) = 2.5 W −57 −50 −45 dBc
PARO output peak-to-average ratio PL(AV) = 20 W [1] 3.6 4.0 4.8 dB
NXP Semiconductors BLF6G22L-40BN
Power LDMOS transistor
7.2 2-Carrier W-CDMA with 5 MHz carrier spacing
7.3 2-Carrier W-CDMA with 10 MHz carrier spacingNXP Semiconductors BLF6G22L-40BN
Power LDMOS transistor
7.4 1-Carrier W-CDMANXP Semiconductors BLF6G22L-40BN
Power LDMOS transistor
7.5 1-Carrier IS-95NXP Semiconductors BLF6G22L-40BN
Power LDMOS transistor
7.6 1-Tone CW
7.7 Test circuit[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] TDK or capacitor of same quality.
[3] American Technical Ceramics type 100A or capacitor of same quality.
Table 8. List of componentsFor test circuit see Figure 12.
C3, C8, C9 multilayer ceramic chip capacitor 33pF [1] multilayer ceramic chip capacitor 1.0pF [1] multilayer ceramic chip capacitor 100nF [2]
C10 multilayer ceramic chip capacitor 33pF [3]
C11, C15 multilayer ceramic chip capacitor 47pF [3]
C12 multilayer ceramic chip capacitor 10 μF [2]
C13 electrolytic capacitor 470 μF; 63 V SMD resistor 10Ω Philips 0603 SMD resistor 820Ω Philips 0603 SMD resistor 1.8kΩ Philips 0603
