BLF6G22-180PN ,Power LDMOS transistorapplications in the 2000 MHz to 2200 MHz frequency range2. Pinning information Table 2. PinningPin ..
BLF6G22L-40BN ,Power LDMOS transistorFeatures and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz ..
BLF6G22LS-100 ,Power LDMOS transistorFeatures and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz ..
BLF6G22LS-100 ,Power LDMOS transistorapplications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performanceRF performance a ..
BLF6G22LS-130 ,Power LDMOS transistorFeaturesn Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, asupply vol ..
BLF6G22LS-180RN ,Power LDMOS transistorFeaturesn Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,a supply vol ..
BTS5434G ,Smart High Side Switches
BTS5434G ,Smart High Side Switches
BTS5434G . ,Smart High Side Switches
BTS5440G ,Smart High Side Switches
BTS5440G ,Smart High Side Switches
BTS5440G ,Smart High Side Switches
BLF6G22-180PN
Power LDMOS transistor
1. Product profile
1.1 General description180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR=7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing5 MHz.
1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, supply voltage of 32 V and an IDq of 1600 mA: Average output power=50W Power gain= 17.5 dB (typ) Efficiency= 27.5% ACPR= 35 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Qualified up to a supply voltage of 32 V
BLF6G22-180PN;
BLF6G22LS-180PN
Power LDMOS transistor
Rev. 5 — 12 July 2013 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.
2-carrier W-CDMA 2110 to 2170 32 50 17.5 27.5 35[1]
NXP Semiconductors BLF6G22(LS)-180PN
Power LDMOS transistor Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information[1] Connected to flange.
3. Ordering information
Table 2. Pinning
BLF6G22-180PN (SOT539A)
BLF6G22LS-180PN (SOT539B)
Table 3. Ordering informationBLF6G22-180PN - flanged balanced LDMOST ceramic package; mounting holes; 4 leads
SOT539A
BLF6G22LS-180PN- earless flanged balanced LDMOST ceramic package; leads
SOT539B
NXP Semiconductors BLF6G22(LS)-180PN
Power LDMOS transistor
4. Limiting values
5. Thermal characteristics
6. Characteristics
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tcase case temperature - 150 C junction temperature - 225 C
Table 5. Thermal characteristicsRth(j-case) thermal resistance from junction to
case
Tcase =80 C;
PL(AV) =50W
BLF6G22-180PN 0.45 K/W
BLF6G22LS-180PN 0.38 K/W
Table 6. CharacteristicsTj = 25 C per section; unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.5 mA 65 --V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 144 mA 1.575 1.9 2.3 V
VGSq gate-source quiescent voltage VDS =32 V; ID= 800 mA 1.725 2.1 2.45 V
IDSS drain leakage current VGS =0V
VDS=28V --3 A
VDS=60V --5 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
-25 -A
IGSS gate leakage current VGS =11 V; VDS=0V - - 300 nA
gfs forward transconductance VDS =10V; ID =7.2A - 10 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V; =5A
-0.1 0.165
NXP Semiconductors BLF6G22(LS)-180PN
Power LDMOS transistor
7. Application information
7.1 Ruggedness in class-AB operationThe BLF6G22-180PN and BLF6G22LS-180PN are capable of withstanding a load
mismatch corresponding to VSWR=10: 1 through all phases under the following
conditions: VDS =28 V; IDq= 1600 mA; PL = 180 W (CW); f = 2170 MHz.
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit. power gain PL(AV) = 50 W 16.3 17.5 18.7 dB
RLin input return loss PL(AV) = 50 W - 10 6.5 dB drain efficiency PL(AV) = 50 W 25 27.5- %
ACPR adjacent channel power ratio PL(AV) = 50 W - 35 33 dBc
Table 8. Application informationMode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 2162.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 32 V;
IDq= 1600 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
PARO output peak-to-average ratio PL(AV) =115 W; 0.01% probabilityon CCDF
4.05 4.5- dB
NXP Semiconductors BLF6G22(LS)-180PN
Power LDMOS transistorNXP Semiconductors BLF6G22(LS)-180PN
Power LDMOS transistor
NXP Semiconductors BLF6G22(LS)-180PN
Power LDMOS transistor
8. Test information
