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BLF6G21-10G
Power LDMOS transistor
1. Product profile
1.1 General description10 W LDMOS power transistor for base station applications at frequencies from to 2200 MHz
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, supply voltage of 28 V and an IDq of 100 mA: Average output power= 0.7W Gain= 18.5 dB Efficiency=15% ACPR= 50 dBc Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, supply voltage of 28 V and an IDq of 100 mA: Average output power=2W Gain= 19.3 dB Efficiency=31% ACPR= 39 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency
BLF6G21-10G
Power LDMOS transistor
Rev. 3 — 11 April 2013 Product data sheet
Table 1. Typical performanceIDq= 100 mA; Tcase =25 C in a common source class-AB production test circuit.
2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 50[1]
1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 39[1]
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor Excellent thermal stability No internal matching for broadband operation Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multi carrier applications in the HF to 2200 MHz frequency range Broadcast drivers
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Table 3. Ordering informationBLF6G21-10G - ceramic surface-mounted package; 2 leads SOT538A
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C junction temperature - 225 C
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
5. Thermal characteristics[1] Thermal resistance is determined under specified RF operating conditions
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operationThe BLF6G21-10G is capable of withstanding a load mismatch corresponding to
VSWR=10: 1 through all phases under the following conditions: VDS =28V;
Table 5. Thermal characteristicsRth(j-case) thermal resistance from junction to case Tcase = 80 C; PL(AV) =11W [1] 3.2 K/W
Table 6. CharacteristicsTj = 25 C unless otherwise specified
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS= 10 V; ID =18mA 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; VDS=28V --1.5 A
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V; VDS =10V - 3.1 - A
IGSS gate leakage current VGS =11V; VDS=0V --150 nA
gfs forward transconductance VDS =10V; ID =0.9A - 0.5 - S
RDS(on) drain-source on-state resistance VGS =VGS(th)+ 3.75 V; ID= 0.625A - 0.4 -
Crs feedback capacitance VGS =0V; VDS =28V; f=1MHz - 0.5 - pF
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4= 2167.5 MHz; performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit. power gain PL(AV) = 0.7 W - 18.5 - dB drain efficiency PL(AV) = 0.7 W - 15 - %
ACPR adjacent channel power ratio PL(AV) = 0.7 W - 50 - dBc
Table 8. Application informationMode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS =28V;
IDq= 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. power gain PL(AV) = 2 W 17.3 19.3 - dB drain efficiency PL(AV) = 2 W 29 31 - %
ACPR adjacent channel power ratio PL(AV) = 2 W - 39 36 dBc
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
7.2 CWNXP Semiconductors BLF6G21-10G
Power LDMOS transistor
7.3 1-carrier W-CDMANXP Semiconductors BLF6G21-10G
Power LDMOS transistor
7.4 2-carrier W-CDMA
