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BLF6G20-45
Power LDMOS transistor
1. Product profile
1.1 General description W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR=7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing5 MHz.
1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, supply voltage of 28 V and an IDq of 360 mA: Average output power= 2.5W Power gain= 19.2 dB (typ) Efficiency=14% ACPR= 50 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
Rev. 3 — 11 March 2013 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.
2-carrier W-CDMA 1805 to 1880 28 2.5 19.2 14 50[1]
NXP Semiconductors BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
BLF6G20-45 (SOT608A)
BLF6G20S-45 (SOT608B)
Table 3. Ordering informationBLF6G20-45 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A
BLF6G20S-45 - ceramic earless flanged package; 2 leads SOT608B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 13 A
Tstg storage temperature 65 +150 C junction temperature - 225 C
NXP Semiconductors BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operationThe BLF6G20-45 and BLF6G20S-45 are capable of withstanding a load mismatch
corresponding to VSWR=10: 1 through all phases under the following conditions:
VDS =28V; IDq =360 mA; PL = 45 W (CW); f = 1880 MHz.
Table 5. Thermal characteristicsRth(j-case) thermal resistance from junction to case Tcase =80 C; PL(AV) =12.5 W 1.7 K/W
Table 6. CharacteristicsTj = 25 C per section; unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.5 mA 65 --V
VGS(th) gate-source threshold voltage VDS =10 V; ID =72mA 1.4 1.9 2.4 V
VGSq gate-source quiescent voltage VDS =28 V; ID= 300 mA 1.70 2.30 2.79 V
IDSS drain leakage current VGS =0V; VDS=28V --1.5 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
-12.5 -A
IGSS gate leakage current VGS =11V; VDS=0V - - 150 nA
gfs forward transconductance VDS =10V; ID =3.6A - 5 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V; =2.5A
-0.2 -
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; performance at VDS = 28 V; IDq = 360 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit. power gain PL(AV) = 2.5 W 18.3 19.2 20.8 dB
RLin input return loss PL(AV) = 2.5 W - 10 6.5 dB drain efficiency PL(AV) = 2.5 W 12 14 - %
ACPR adjacent channel power ratio PL(AV) = 2.5 W - 50 46 dBc
NXP Semiconductors BLF6G20-45; BLF6G20S-45
Power LDMOS transistorNXP Semiconductors BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
8. Test informationNXP Semiconductors BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
NXP Semiconductors BLF6G20-45; BLF6G20S-45
Power LDMOS transistor[1] American technical ceramics type 100B or capacitor of same quality.
[2] American technical ceramics type 100A or capacitor of same quality.
Table 8. List of componentsFor test circuit, see Figure 6 and Figure7. multilayer ceramic chip capacitor 0.7 pF [1] multilayer ceramic chip capacitor 3.9 pF [1]
C3, C13 tantalum capacitor 10 F
C4, C5 multilayer ceramic chip capacitor 1.5 F
C6, C10 multilayer ceramic chip capacitor 10 pF [1] multilayer ceramic chip capacitor 1.2 pF [1]
C8, C9 multilayer ceramic chip capacitor 100 nF
C11 multilayer ceramic chip capacitor 220 nF
C12 multilayer ceramic chip capacitor 4.7 F
C14 Philips electrolytic capacitor 220 F, 63 V
C15, C16 multilayer ceramic chip capacitor 6.8 pF [2] Philips chip resistor 5.6
