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BLF6G20-180PN
Power LDMOS transistor
Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR=7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing5 MHz.
1.2 Features Typical 2-carrier W-CDMA performanceat frequenciesof 1805 MHz and 1880 MHz,a
supply voltage of 32 V and an IDq of 1600 mA: Average output power=50W Power gain=18 dB (typ) Efficiency= 29.5% ACPR= −35 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Qualified up to a supply voltage of 32 V Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G20-180PN
Power LDMOS transistor
Rev. 03 — 30 March 2009 Product data sheet
Table 1. Typical performanceRF performance at Tcase = 25 °C in a common source class-AB production test circuit.
2-carrier W-CDMA 1805 to 1880 32 50 18 29.5 −35[1]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLF6G20-180PN
Power LDMOS transistor
1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1800 MHz to 2000 MHz frequency range
Pinning information[1] Connected to flange.
Ordering information Limiting values
Table 2. Pinning drain1 drain2 gate1 gate2 source [1]3
sym117
Table 3. Ordering informationBLF6G20-180PN- flanged balanced LDMOST ceramic package; mounting holes; 4 leads
SOT539A
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
Tstg storage temperature −65 +150 °C
Tcase case temperature - 150 °C junction temperature - 225 °C
NXP Semiconductors BLF6G20-180PN
Power LDMOS transistor Thermal characteristics Characteristics Application information
Table 5. Thermal characteristicsRth(j-case) thermal resistance from junction to case Tcase =80 °C; PL(AV)= 50 W 0.45 K/W
Table 6. CharacteristicsTj = 25 °C per section; unless otherwise specified.
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V;ID= 144 mA 1.575 1.9 2.3 V
VGSq gate-source quiescent voltage VDS =32V;ID= 800 mA 1.725 2.1 2.45 V
IDSS drain leakage current VGS =0V
VDS =28V - - 3 μA
VDS =60V - - 5 μA
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V
-25 - A
IGSS gate leakage current VGS= 11 V; VDS=0V - - 300 nA
gfs forward transconductance VDS =10V; ID= 7.2A - 10 - S
RDS(on) drain-source on-state
resistance
VGS =VGS(th) + 3.75V; =5A 0.1 0.165 Ω
Table 7. Application informationMode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit. power gain PL(AV) = 50 W 16.8 18 19.2 dB
RLin input return loss PL(AV) = 50 W - −10 −6.5 dB drain efficiency PL(AV) = 50 W 26 29.5- %
ACPR adjacent channel power ratio PL(AV) = 50 W - −35 −33 dBc
Table 8. Application informationMode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 1872.5 MHz; f2 = 1877.5 MHz; RF performance at VDS = 32 V;
IDq= 1600 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
PARO output peak-to-average ratio PL(AV)= 115W; 0.01% probabilityon CCDF
4.1 4.3- dB
NXP Semiconductors BLF6G20-180PN
Power LDMOS transistor
7.1 Ruggedness in class-AB operationThe BLF6G20-180PN is capable of withstanding a load mismatch corresponding to
VSWR=10: 1 through all phases under the following conditions: VDS =28V;
IDq= 1600 mA; PL = 180 W (CW); f = 1880 MHz.
NXP Semiconductors BLF6G20-180PN
Power LDMOS transistor
NXP Semiconductors BLF6G20-180PN
Power LDMOS transistor Test information
