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Partno	Mfg	Dc	Qty	Available	Descript
BLF548	PHILIPS	N/a	27	avai	UHF push-pull power MOS transistor

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BLF548
UHF push-pull power MOS transistor

Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF548
FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures
excellent reliability Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A2
PIN CONFIGURATION
CAUTION
WARNING
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF548
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF548
CHARACTERISTICS (per section)
Tj = 25 °C unless otherwise specified.
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF548
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF548
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified.
RF performance in a common source, push-pull, class-B test circuit.
Ruggedness in class-B operation
The BLF548 is capable of withstanding a load mismatch
corresponding to VSWR = 10 through all phases under the
following conditions:
VDS = 28 V; f = 500 MHz at rated output power.

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