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Partno	Mfg	Dc	Qty	Available	Descript
BLF245	PHL	N/a	12	avai	VHF power MOS transistor
BLF245	PHILIPS	N/a	7	avai	VHF power MOS transistor
BLF245	PH	N/a	27	avai	VHF power MOS transistor

BLF245 ,VHF power MOS transistorapplications in the VHF frequencyFig.1 Simplified outline and symbol.range.The transistor is encap ..
BLF245 ,VHF power MOS transistorPIN CONFIGURATION• High power gainlfpage• Low noise figure1 4• Easy power control• Good thermal sta ..
BLF245 ,VHF power MOS transistor
BLF4G10LS-120 , UHF power LDMOS transistor
BLF542 ,UHF power MOS transistorapplications in the UHF frequencyFig.1 Simplified outline and symbol.range.The transistor is encap ..
BLF542 ,UHF power MOS transistorPIN CONFIGURATION• High power gainhalfpage• Easy power control• Gold metallization• Good thermal st ..
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BLF245
VHF power MOS transistor

Philips Semiconductors Product specification
VHF power MOS transistor BLF245
FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
PINNING - SOT123
PIN CONFIGURATION
CAUTION
WARNING
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a class-B test circuit.
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1=1 kΩ.
RF performance in CW operation in a common source class-B test circuit.
Note R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch
corresponding to VSWR=50 through all phases under
the following conditions: =25 °C; Rth mb-h= 0.3 K/W; at rated load power.

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