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BLF175
HF/VHF power MOS transistor
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures
excellent reliability.
DESCRIPTIONSilicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications inthe HF/VHF frequency
range.
Thetransistor hasa 4-lead, SOT123A
flange package, with a ceramic cap.
All leads are isolated from the flange.
Amarking code,showing gate-source
voltage (VGS) informationis provided
for matched pair applications. Refer the handbook 'General' sectionfor
further information.
PINNING - SOT123A
PIN CONFIGURATION
QUICK REFERENCE DATARF performance at Th = 25°C in a common source test circuit.
Note 2-tone efficiency.
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
CHARACTERISTICSTj = 25 °C unless otherwise specified.
VGS group indication
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
APPLICATION INFORMATION FOR CLASS-A OPERATION =25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in SSB operation in a common source circuit.= 28.000 MHz;f2= 28.001 MHz.
Note Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
List of components (class-A test circuit)
Note American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF175
APPLICATION INFORMATION FOR CLASS-AB OPERATIONTh = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in SSB operation in a common source circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
Notes Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB. 2-tone efficiency.
Ruggedness in class-AB operationThe BLF175is capableof withstandinga load mismatch correspondingto VSWR=50 throughall phasesatPL =30W
single tone under the following conditions:
VDS = 50 V; f = 28 MHz.
