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BLC8G27LS-160AV from NXP,NXP Semiconductors

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BLC8G27LS-160AV

Manufacturer: NXP

Power LDMOS transistor

Partnumber Manufacturer Quantity Availability
BLC8G27LS-160AV,BLC8G27LS160AV NXP 326 In Stock

Description and Introduction

Power LDMOS transistor The BLC8G27LS-160AV is a power LDMOS transistor manufactured by NXP. Here are its key specifications:

1. **Frequency Range**: 2.3–2.7 GHz  
2. **Output Power**: 160 W (typical)  
3. **Gain**: 16 dB (typical)  
4. **Efficiency**: 40% (typical)  
5. **Drain-Source Voltage (VDS)**: 32 V  
6. **Package**: Air-cavity ceramic  
7. **Applications**: Designed for use in RF power amplifiers, particularly in industrial, scientific, and medical (ISM) applications.  

For detailed electrical and thermal characteristics, refer to NXP's official datasheet.

Application Scenarios & Design Considerations

Power LDMOS transistor

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