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BLC8G27LS-160AV
Power LDMOS transistor
1. Product profile
1.1 General description160 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR=7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Decoupling leads to enable improved video bandwidth Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications RF power amplifier for W-CDMA base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range
BLC8G27LS-160A V
Power LDMOS transistor
Rev. 1 — 23 May 2013 Objective data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a Doherty production test circuit.
1-carrier W-CDMA 2496 to 2690 28 32 14.5 43 30 [1]
NXP Semiconductors BLC8G27LS-160AV
Power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values[1] Continuous use at maximum temperature will affect the reliability.
5. Thermal characteristics
6. Characteristics
Table 2. Pinning
Table 3. Ordering information
BLC8G27LS-160AV- plastic earless flanged cavity package; 6 leads SOT1275
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C junction temperature [1]- 225 C
Table 5. Thermal characteristics
Rth(j-case) thermal resistance from junction to case Tcase =80 C; =W
K/W
NXP Semiconductors BLC8G27LS-160AV
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
NXP Semiconductors BLC8G27LS-160AV
Power LDMOS transistor
8. Package outline Package outline SOT1275
NXP Semiconductors BLC8G27LS-160AV
Power LDMOS transistor
9. Handling information
10. Abbreviations
11. Revision history
Table 6. Abbreviations
3GPP 3rd Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
DPCH Dedicated Physical CHannel
LDMOS Laterally Diffused Metal-Oxide Semiconductor
PAR Peak-to-Average Ratio
W-CDMA Wideband Code Division Multiple Access
Table 7. Revision history
BLC8G27LS-160AV 20130523 Objective data sheet - -
NXP Semiconductors BLC8G27LS-160AV
Power LDMOS transistor
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Objective [short] data sheet Development This document contains data from the objective specification for product development.
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