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BGU7031
1 GHz wideband low-noise amplifier
1. Product profile
1.1 General descriptionThe BGU7031 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity, low-noise applications over a frequency range of 40 MHz to GHz. It is especially suited to Set-Top Box applications.
The LNA is housed in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits Internally biased Flat gain between 40 MHz and 1 GHz Noise figure of 4.5 dB High linearity with an IP3O of 29 dBm 75 Ω input and output impedance ESD protection > 2 kV Human Body Model (HBM) on all pins
1.3 Applications Terrestrial and cable Set-Top Boxes (STB) Silicon and “Can” tuners Personal and Digital Video Recorders (PVR and DVR) Home networking and in-house signal distribution
BGU7031
1 GHz wideband low-noise amplifier
Rev. 2 — 7 September 2010 Product data sheetThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BGU7031
1 GHz wideband low-noise amplifier
1.4 Quick reference data[1] ICC(tot) is configurable with external resistor.
[2] The fundamental frequency (f1) lies between 40 MHz and 1000 MHz. The intermodulation product (IM3) is ×f2− f1, where f2=f1±1 MHz. Input power Pi= −10 dBm.
2. Pinning information
3. Ordering information
4. MarkingNote: % character indicates the location of production.
Table 1. Quick reference dataTamb= 25 °C; typical values at VCC = 5 V; ZS =ZL =75 Ω; Rbias= 43 Ω; 40 MHz ≤ f1 ≤ 1000 MHz.
VCC supply voltage RF input AC coupled 4.75 5.0 5.25V
ICC(tot) total supply current [1] -43 - mA
Tamb ambient temperature −10 +25 +70 °C noise figure - 4.5- dB
PL(1dB) output power at 1 dB gain
compression
1GHz - 13 - dBm
IP3O output third-order intercept point [2] -29 - dBm
Table 2. Pinning1RF_OUT
2VCC
3n.c.
4n.c.
5GND
6RF_IN
Table 3. Ordering informationBGU7031 - plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codesBGU7031 SC%
NXP Semiconductors BGU7031
1 GHz wideband low-noise amplifier
5. Limiting values[1] Tsp is the temperature at the solder point of the ground lead.
6. Thermal characteristics
7. Characteristics[1] The fundamental frequency (f1) lies between 40 MHz and 1000 MHz. The intermodulation product (IM3) is ×f2− f1, where f2=f1±1 MHz. Input power Pi= −10 dBm.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCC supply voltage RF input AC coupled −0.6 5.25 V
ICC(tot) total supply current configurable with external resistor - 60 mA
Ptot total power dissipation Tsp ≤ 100 °C [1]- 250 mW input power single tone - 10 dBm
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −10 +70 °C
VESD electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E kV
Table 6. Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point 240 K/W
Table 7. CharacteristicsTamb= 25 °C; typical values at VCC = 5 V; ZS =ZL =75 Ω; Rbias= 43 Ω; 40 MHz ≤ f1 ≤ 1000 MHz.
VCC supply voltage RF input AC coupled 4.75 5.0 5.25V
ICC(tot) total supply current - 43 - mA
|s21|2 insertion power gain - 10 dB
SLsl slope straight line - −1- dB flatness of frequency response - −0.2- dB noise figure - 4.5 - dB
RLin input return loss - 18 - dB
RLout output return loss - 12 - dB
PL(1dB) output power at 1 dB gain
compression
1GHz - 14 - dBm
IP3O output third-order intercept point [1] -29 - dBm
NXP Semiconductors BGU7031
1 GHz wideband low-noise amplifier
8. Application informationOther applications are possible. Please contact your local sales representative for more
information. Application notes are available on the NXP website.
8.1 Application circuitAll control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
8.2 Application circuit board layoutNXP Semiconductors BGU7031
1 GHz wideband low-noise amplifier[1] L1 and R1 must have a power rating of 0.1 W or higher.
Table 8. List of componentsSee Figure 1 and Figure2.
C1, C2 capacitor 10 nF DC blocking capacitor 10 nF decoupling capacitor 10 μF decoupling chip ferrite bead 1.5 kΩ [1] Murata BLM18HE152SN1DF RF choke resistor 43 Ω [1] Rbias bias setting
X1, X2 connector 75 Ω F-connector, edge mount PCB
reflow type, Bomar 861V509ERG
input/output
NXP Semiconductors BGU7031
1 GHz wideband low-noise amplifier
9. Package outline
Fig 3. Package outline SOT363
