BGM1013 Fast Delivery |IC PHOENIX CO.,LIMITED

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BGM1013
BGM1013; MMIC wideband amplifier
Product proﬁle1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband ampliﬁer with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features Internally matched to 50Ω Good output match to 75Ω Very high gain; 35.5 dB at 1 GHz Upper corner frequency at 2.1 GHz 31 dB ﬂat gain up to 2.2 GHz application 14 dBm saturated output power at 1 GHz High linearity (23 dBm IP3out and 43 dBc IM2) 40 dB isolation.
1.3 Applications Low Noise Block (LNB) Intermediate Frequency (IF) ampliﬁers Cable systems General purpose.
1.4 Quick reference data
BGM1013
MMIC wideband ampliﬁer
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1: Quick reference data DC supply voltage RF input; AC coupled - 5 6 V DC supply current 23 27.5 33 mA
|s21|2 insertion power gain f=1 GHz 34.5 35.5 36.2 dB noise ﬁgure f=1 GHz - 4.6 4.7 dB
PL(sat) saturated load powerf=1 GHz 13.0 14.0 - dBm
Philips Semiconductors BGM1013 Pinning information Ordering information Marking Limiting values
Table 2: Pinning
1VS
2, 5 GND2 RF_OUT GND1 RF_IN
SOT363
sym062
Table 3: Ordering information
BGM1013 SC-88 plastic surface mounted package; 6 leads SOT363
Table 4: Marking codes
BGM1013 C4-
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). DC supply voltage RF input; AC coupled - 6 V DC supply current - 35 mA
Ptot total power dissipation Tsp≤90°C - 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C maximum drive power - −10 dBm
Philips Semiconductors BGM1013 Recommended operating conditions Thermal characteristics Characteristics
Table 6: Operating conditions supply voltage 4.5 5.0 5.5 V
Tamb ambient temperature −40 25 85 °C
Table 7: Thermal characteristics
Rth(j-sp) thermal resistance from junction to solder point Ptot= 200 mW; Tsp≤90°C 300 K/W
Table 8: Characteristics= 5 V; IS= 27.5 mA; Tj =25 °C; measured on demo board; unless otherwise speciﬁed. DC supply voltage RF input; AC coupled - 5 6 V DC supply current 23 27.5 33 mA
|s21|2 insertion power gain f= 100 MHz 34.5 35.2 35.9 dB=1 GHz 34.5 35.5 36.2 dB= 1.8 GHz 33.0 34.0 35.2 dB= 2.2 GHz 30.5 31.8 33.1 dB= 2.6 GHz 25.2 29.7 31.2 dB=3 GHz 24.0 26.1 27.9 dB
|s11|2 input return loss f=1 GHz 10.1 10.6 - dB= 2.2 GHz 9.3 10.2 - dB
|s22|2 output return loss ZL =50Ω=1 GHz 18 20 - dB= 2.2 GHz 13 16 - dB =75Ω=1 GHz 15 17 - dB= 2.2 GHz 12 15 - dB
|s12|2 isolation f=1 GHz 40 42 - dB= 2.2 GHz 34 36 - dB noise ﬁgure f=1 GHz - 4.6 4.7 dB= 2.2 GHz - 4.9 5.1 dB bandwidth 3 dB below ﬂat gain at f=1 GHz - 2.1 - GHz stability factor f=1 GHz 1.2 1.3 -= 2.2 GHz 0.9 1.0 -
PL(sat) saturated load power f=1 GHz 13.0 14.0 - dBm= 2.2 GHz 9.0 10.2 - dBm
Philips Semiconductors BGM1013 Application information
Figure 1 shows a typical application circuit for the BGM1013 MMIC. The device is
internally matched to 50 Ω and therefore does not need any external matching. Output
impedance is also very good to 75 Ω load. The value of the input and output DC blocking
capacitors C1 and C2 should be not more than 100 pF for applications above 100 MHz.
Their values can be used to ﬁne-tune the input and output impedance.
For the RF-choke, optimal results are obtained with a good quality chip inductor like the
TDK MLG1608 (0603) or a wire-wound SMD. The value of the inductor can be used to
ﬁne-tune the output impedance.
The RF choke and supply decoupling components shouldbe locatedas closeas possible
to the MMIC.
Ground paths must be as short as possible. The printed-circuit board (PCB) top ground
plane must be as close as possible to the MMIC, and ideally directly beneath it. When
using vias, use at least 3 vias for the top ground plane in order to limit ground path
inductance. Supply decoupling with C3 should be from pin 1 to the same top ground
plane.
PL(1dB) load power at 1 dB gain
compression=1 GHz 12.0 13.0 - dBm= 2.2 GHz 7.0 8.1 - dBm
IP3in input third order intercept point f=1GHz −14 −12.8 - dBm= 2.2 GHz −15 −13.2 - dBm
IP3out output third order intercept pointf=1 GHz 21 22.7 - dBm= 2.2 GHz 17 18.6 - dBm
IM2 second order intermodulation
product=1 GHz; PD= −45 dBm (PL= −10 dBm) - 45 43 dBc=1 GHz; PD= −40 dBm (PL=−5 dBm) - 43 41 dBc
Table 8: Characteristics …continued= 5 V; IS= 27.5 mA; Tj =25 °C; measured on demo board; unless otherwise speciﬁed.
Philips Semiconductors BGM1013
Figure 2 shows the PCB layout used for the typical application.
Table 9: List of components used for the typical application
C1, C2 multilayer ceramic chip capacitor 100pF 0603 multilayer ceramic chip capacitor 22 nF 0603 SMD resistor - 0603 SMD inductor 100nH 0603
Philips Semiconductors BGM1013
9.1 Flat gain application: 31 dB between 800 MHz and 2.2 GHz changing the componentsat the outputof the ampliﬁer,a ﬂatter gain canbe obtained.
The gainis31 dB±1 dB between 800 MHz and 2.2 GHz. PL(1dB)is10 dBmat1 GHz and
5.7 dBm at 2.2 GHz.
[1] Pin 2 should not be connected in order to obtain optimal input matching.
Table 10: List of components used for the 31 dB ﬂat gain application[1] multilayer ceramic chip capacitor 100pF 0603 multilayer ceramic chip capacitor 4.7 nF 0603 multilayer ceramic chip capacitor 22 nF 0603 SMD resistor 27Ω 0603 SMD inductor 5.6nH 0603
Philips Semiconductors BGM1013

Partno	Mfg	Dc	Qty	Available	Descript
BGM1013	PH	N/a	2740	avai	BGM1013; MMIC wideband amplifier