BGA318 ,Silicon Bipolar MMIC AmplifierCharacteristics at T = 25 °C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max ..
BGA416 ,Silicon MMICs
BGA416 ,Silicon MMICs
BGA420 ,Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable)
BGA420 ,Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable)
BGA420E6327 , Si-MMIC-Amplifier in SIEGET 25-Technologie
BSN205A ,N-channel enhancement mode vertical D-MOS transistor
BSN20W ,N-channel enhancement mode vertical D-MOS transistor
BSN20W ,N-channel enhancement mode vertical D-MOS transistor
BSN254 ,N-channel enhancement mode vertical D-MOS transistor
BSN254 ,N-channel enhancement mode vertical D-MOS transistor
BSN254A ,N-channel enhancement mode vertical D-MOS transistor
BGA318
Silicon Bipolar MMIC Amplifier
BGA 318
Silicon Bipolar MMIC-Amplifier Cascadable 50 -gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 1.2 GHz
RF OUT/Bias
Maximum Ratings
Thermal Resistance
BGA 318
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
AC characteristics (VD = 4.7 V, Zo = 50 )
Typical biasing configurationBias = VCC - VD / IDVD = 4.7V
BGA 318
S-Parameters at TA = 25 °CD = 4.7 V, Zo = 50
Insertion power gain |S21|2 = f ( f )D = 4.7V, ID = 35 mA
10 1
10
15
25
Noise figure NF = f ( f )D = 4.7V, ID = 35 mA
10 1
10
BGA 318
Output power 1-dB-gain compression-1dB = f ( f )D = 4.7V, ID = 35 mA
10 1
10
20
-1dB
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