BGA2776 ,MMIC wideband amplifierAPPLICATIONS6 541• Cable systems• LNB IF amplifiers63• General purpose• ISM. 4 2, 5132Top view MAM4 ..
BGA2776 ,MMIC wideband amplifier
BGA318 ,Silicon Bipolar MMIC AmplifierCharacteristics at T = 25 °C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max ..
BGA416 ,Silicon MMICs
BGA416 ,Silicon MMICs
BGA420 ,Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable)
BSN205A ,N-channel enhancement mode vertical D-MOS transistor
BSN205A ,N-channel enhancement mode vertical D-MOS transistor
BSN20W ,N-channel enhancement mode vertical D-MOS transistor
BSN20W ,N-channel enhancement mode vertical D-MOS transistor
BSN254 ,N-channel enhancement mode vertical D-MOS transistor
BSN254 ,N-channel enhancement mode vertical D-MOS transistor
BGA2776
MMIC wideband amplifier
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2776
FEATURES Internally matched Very wide frequency range Very flat gain High gain High output power Unconditionally stable.
APPLICATIONS Cable systems LNB IF amplifiers General purpose ISM.
DESCRIPTIONSilicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuitina 6-pin
SOT363 SMD plastic package.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2776
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
CHARACTERISTICS =5V; IS= 24.4 mA; f=1 GHz; Tj =25 °C; unless otherwise specified.
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2776
APPLICATION INFORMATIONFigure 2 shows a typical application circuit for the
BGA2776 MMIC. The deviceis internallymatchedto50Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should be not more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increasedto 220 nH.At frequencies above1 GHza much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
suchas the TDK MLG 1608 (0603),ora wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths mustbe usedfor the ground planesof the
ground pins GND1 andGND2, and these paths mustbeas
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristicsof the MMIC make and ideal building blockinIF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5). Fig.6 the MMICis usedasa driverto the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2776
Philips Semiconductors Product specification
MMIC wideband amplifier BGA2776
