BG3123 ,RF-MOSFETBG3123...4DUAL N-Channel MOSFET Tetrode56• Two gain controlled input stages for UHF and VHF -tune ..
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BG3123
RF-MOSFET
BG3123...
DUAL N-Channel MOSFET Tetrode• Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Optimized for UHF (amp. B) and VHF (amp. A)
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
BG3123BG3123R
ESD: Electrostatic discharge sensitive device, observe handling precaution!* For amp. A; ** for amp. B
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
BG3123...
Thermal Resistance
Electrical Characteristics
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BG3123...
Electrical Characteristics
AC Characteristics VDS = 5V, VG2S = 4V, (ID = 14 mA) (verified by random sampling)
BG3123...
Total power dissipation Ptot = ƒ(TS)
amp. A
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
amp. B
50
100
150
200
300
tot
Drain current ID = ƒ(IG1)G2S = 4V
amp. A
10
12
16
Drain current ID = ƒ(IG1)G2S = 4V
amp. B1020304050
10
12
16
BG3123...
Output characteristics ID = ƒ(VDS)G2S = 4V, VG1S = Parameter in V
amp. A
10
12
14
18
Output characteristics ID = ƒ(VDS)G2S = 4V, VG1S = Parameter in V
amp. B
10
12
14
18
Gate 1 current IG1 = ƒ(VG1S)DS = 5V, VG2S = Parameter in V
amp. A
20
40
60
80
120
Gate 1 current IG1 = ƒ(VG1S)DS = 5V, VG2S = Parameter in V
amp. B
20
40
60
80
120
BG3123...
Gate 1 forward transconductancefs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A
12
16
20
24
32
Gate 1 forward transconductancefs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. B
10
15
25
Drain current ID = ƒ(VG1S)DS = 5V, VG2S = Parameter
amp. A
12
16
20
28
Drain current ID = ƒ(VG1S)DS = 5V, VG2S = Parameter
amp. B
10
12
16
