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Partno	Mfg	Dc	Qty	Available	Descript
BFY50	ST	N/a	5	avai	MEDIUM POWER AMPLIFIER

BFY50 ,MEDIUM POWER AMPLIFIERELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified)caseSymbol Parameter Test Conditions ..
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BFY50
MEDIUM POWER AMPLIFIER
BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistorsin Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BFY50 BFY51
VCBO Collector-Base Voltage(IE =0) 80 60 V
VCEO Collector-Emitter Voltage(IB =0) 35 30 V
VEBO Emitter-Base Voltage(IC =0) 6 V Collector Current 1 A
ICM Collector Peak Current(tp <5 ms) 1.5 A
Ptot Total Dissipationat Tamb≤25oC Tcase≤25oC
Tstg Storage Temperature -65to 200 oC Max. Operating Junction Temperature 200 oC
TO-39
1/5
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
218 C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current(IE =0)
for BFY50
VCB =60V
VCB =60V Tcase =100oC
for BFY51
VCB =40V
VCB =40V Tcase =100oC
IEBO Emitter Cut-off Current
(IC =0)
VEB =5V
VEB =5V Tcase =100oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE=0) =100μA
for BFY50
for BFY51
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =30 mA
for BFY50
for BFY51
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC =0) =100 μA6 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =150 mA IB =15 mA
for BFY50
for BFY51 =1A IB =0.1A
for BFY50
for BFY51
VBE(sat)∗ Base-Emitter
Saturation Voltage =150 mA IB =15 mA =1A IB =0.1A
hFE∗ DC Current Gain for BFY50 =10 mA VCE =10V =150 mA VCE =10V =1A VCE =10V
for BFY51 =10 mA VCE =10V =150 mA VCE =10V =1A VCE =10V
hfe∗ Small Signal Current
Gain
VCE =6V f =1KHz =1 mA
for BFY50
for BFY51 =10 mA
for BFY50
for BFY51 Transition Frequency IC =50 mA VCE =10V
for BFY50
for BFY51
MHz
MHz
CCBO Collector Base
Capacitance =0 VCB=10Vf= 1MHz 10 pF
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 1%
BFY50/BFY51
2/5
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
hie Input Impedance IC =10 mA VCE =5V f =1KHz
for BFY50
for BFY51
hre Reverse Voltage Ratio IC =10 mA VCE =5V f =1KHz
for BFY50
for BFY51-6-6
hoe Output Admittance IC =10 mA VCE =5V f =1KHz
for BFY50
for BFY51 Delay Time IC =150 mA VCC =10V
IB1 =15 mA VBE =-2V ns Rise Time IC =150 mA VCC =10V
IB1 =15 mA VBE =-2V ns Storage Time IC =150 mA VCC =10V
IB1 =-IB2 =15 mA
300 ns Fall Time IC =150 mA VCC =10V
IB1 =-IB2 =15 mA ns
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 1%
BFY50/BFY51
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 6.6 0.260 8.5 0.334 9.4 0.370 5.08 0.200 1.2 0.047 0.9 0.035
L45o (typ.) E
P008B
TO-39 MECHANICAL DATA
BFY50/BFY51
4/5
Information furnishedis believedtobe accurateand reliable. However, SGS-THOMSON Microelectronics assumesno responsabilityforthe
consequencesofuse ofsuch informationnorfor anyinfringementof patentsor otherrightsof third parties which may resultsfromits use.No
licenseis grantedby implicationor otherwise underany patentor patentrightsof SGS-THOMSON Microelectronics. Specifications mentionedthis publicationare subjectto change without notice.This publication supersedes andreplacesall information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenot authorizedfor useascriticalcomponentsin lifesupportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectonics. 1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
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BFY50/BFY51
5/5
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