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Partno	Mfg	Dc	Qty	Available	Descript
BFW43		N/a	1	avai	HIGH VOLTAGE AMPLIFIER

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BFW43
HIGH VOLTAGE AMPLIFIER
BFW43
HIGH VOLTAGE AMPLIFIER
DESCRIPTION
The BFW43isa silicon planar epitaxial PNP
transistorsin Jedec TO-18 metal case.Itis
designedfor usein amplifiers where high voltage
and high gain are necessary.In particular,its
featurea VCEOof 150Vare specified overa wide
rangeof curent.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage(IE=0) -150 V
VCEO Collector-Emitter Voltage(IB=0) -150 V
VEBO Emitter-Base Voltage(IC =0) -6 V Collector Current -0.1 A
Ptot Total Dissipationat Tamb≤25oC Tcase≤25oC
Tstg Storage Temperature -55to200 oC Max. Operating Junction Temperature 200 oC
TO-18
1/5
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
438C/WC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current(IE =0)
VCE =-100V
VCE =-100V Tamb =125oC
V(BR)CBO∗ Collector-Base
Breakdown Voltage
(IE =0) =-10 μA-150 V
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =-2mA -150 V
V(BR)EBO∗ Emitter-Base
Breakdown Voltage
(IC =0) =-10 μA-6 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =-10mA IB=-1mA -0.1 -0.5 V
VBE(sat)∗ Base-Emitter
Saturation Voltage =-10mA IB=-1mA -0.74 -0.9 V
hFE∗ DC Current Gain IC =-1mA VCE =-10V =-10mA VCE =-10V =-10 μAVCE=-10V
Tamb =-55oC
100 Transition Frequency VCE =-10Vf =20 MHz =-1mA =-10mA 60 MHz
MHz
CEBO Emitter Base
Capacitance=0 VEB= -0.5Vf= 1MHz 20 25 pF
CCBO Collector Base
Capacitance=0 VCB =-5Vf= 1MHz 5 7 pF
∗ Pulsed: Pulse duration=300μs,duty cycle≤1% Current Gain. Collector-emitter SaturationVoltage.
BFW43
2/5
Base-emitter Saturation Voltage. Transition Frequency.
BFW43
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 5.3 0.208 4.9 0.193 5.8 0.228 2.54 0.100 1.2 0.047 1.16 0.045
L45o 45o E
TO-18 MECHANICAL DATA
BFW43
4/5
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writtenapprovalof SGS-THOMSONMicroelectonics. 1997 SGS-THOMSONMicroelectronics- PrintedinItaly- AllRights Reserved
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BFW43
5/5
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