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BFU725F
NPN wideband silicon germanium RF transistor
1. Product profile
1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF)= 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium technology
1.3 Applications 2nd LNA stage and mixer stage in DBS LNB’s Satellite radio Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ka band oscillators (DRO’s)
1.4 Quick reference data
BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 2 — 3 November 2011 Product data sheet
Table 1. Quick reference dataVCBO collector-base voltage open emitter - - 10 V
VCEO collector-emitter voltage open base - - 2.8 V
VEBO emitter-base voltage open collector - - 1.0 V collector current - 25 40 mA
Ptot total power dissipation Tsp90C [1]- - 136 mW
hFE DC current gain IC =10mA; VCE =2V; =25C
160 280 400
NXP Semiconductors BFU725F/N1
NPN wideband silicon germanium RF transistor[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K> 1. If K< 1 then Gp(max)= Maximum Stable Gain (MSG).
2. Pinning information
3. Ordering information
4. MarkingCCBS collector-base
capacitance
VCB =2V; f=1MHz - 70 - fF transition frequency IC =25mA; VCE =2V; 2GHz; Tamb =25C
-55 - GHz
Gp(max) maximum power gain IC =25mA; VCE =2V; 5.8GHz; Tamb =25C
[2] -18 - dB noise figure IC =5mA; VCE =2V; 5.8GHz; S= opt;
Tamb =25C
-0.7 - dB
Table 1. Quick reference data …continued
Table 2. Discrete pinning
Table 3. Ordering informationBFU725F/N1 - plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
Table 4. MarkingBFU725F/N1 B7* * = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
NXP Semiconductors BFU725F/N1
NPN wideband silicon germanium RF transistor
5. Limiting values[1] Tsp is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 10 V
VCEO collector-emitter voltage open base - 2.8 V
VEBO emitter-base voltage open collector - 1.0 V collector current - 40 mA
Ptot total power dissipation Tsp90C [1]- 136 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C
Table 6. Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point 440 K/W
NXP Semiconductors BFU725F/N1
NPN wideband silicon germanium RF transistor
7. CharacteristicsTable 7. Characteristics =25 C unless otherwise specified.
V(BR)CBO collector-base breakdown
voltage =2.5 A; IE=0 mA 10 --V
V(BR)CEO collector-emitter breakdown
voltage =1mA; IB=0 mA 2.8 --V collector current - 2540mA
ICBO collector-base cut-off current IE =0mA; VCB =4.5V - - 100 nA
hFE DC current gain IC =10 mA; VCE=2V 160 280 400
CCES collector-emitter capacitance VCB=2 V; f=1 MHz - 268- fF
CEBS emitter-base capacitance VEB= 0.5 V; f=1 MHz - 400- fF
CCBS collector-base capacitance VCB=2 V; f=1 MHz - 70 - fF transition frequency IC =25 mA; VCE =2V; f=2GHz; Tamb =25 C- 55 - GHz
Gp(max) maximum power gain IC =25 mA; VCE =2V; Tamb =25C [1]= 1.5 GHz - 28 - dB= 1.8 GHz - 27 - dB= 2.4 GHz - 25.5- dB= 5.8 GHz - 18 - dB=12 GHz - 13 - dB
s212 insertion power gain IC =25 mA; VCE =2V; Tamb =25C= 1.5 GHz - 26.7- dB= 1.8 GHz - 25.4- dB= 2.4 GHz - 23 - dB= 5.8 GHz - 16 - dB=12 GHz - 9.3- dB noise figure IC =5mA; VCE =2V; S = opt; Tamb =25C= 1.5 GHz - 0.42- dB= 1.8 GHz - 0.43- dB= 2.4 GHz - 0.47- dB
f=5.8GHz - 0.7 - dB=12 GHz - 1.1- dB
Gass associated gain IC =5mA; VCE =2V; S = opt; Tamb =25C= 1.5 GHz - 24 - dB= 1.8 GHz - 22 - dB= 2.4 GHz - 20 - dB= 5.8 GHz - 13.5- dB=12 GHz - 10 - dB
NXP Semiconductors BFU725F/N1
NPN wideband silicon germanium RF transistor[1] Gp(max) is the maximum power gain, if K 1. If K 1 then Gp(max) =MSG.
PL(1dB) output power at 1 dB gain
compression =25 mA; VCE =2V; ZS =ZL =50 ; Tamb =25C
f=1.5GHz - 8.5 - dBm
f=1.8GHz - 9 - dBm
f=2.4GHz - 8.5 - dBm
f=5.8GHz - 8 - dBm
IP3 third-order intercept point IC =25 mA; VCE =2V; ZS =ZL =50 ; Tamb =25 C; =f1 + 1 MHz= 1.5 GHz - 17 - dBm= 1.8 GHz - 17 - dBm= 2.4 GHz - 17 - dBm= 5.8 GHz - 19 - dBm
Table 7. Characteristics …continued =25 C unless otherwise specified.
NXP Semiconductors BFU725F/N1
NPN wideband silicon germanium RF transistor
