BFS505 ,NPN 9 GHz wideband transistorFEATURES PINNING Low current consumptionPIN DESCRIPTION3handbook, 2 columns High power gainCode: ..
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BFT25 ,NPN 2 GHz wideband transistor
BFT25 ,NPN 2 GHz wideband transistorfeatures low current consumption (100 A to 1 mA); due to its high transition frequency, it also 12 ..
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BFT25A ,NPN 5 GHz wideband transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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BSH201 ,P-channel vertical D-MOS logic level FET
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BFS505
NPN 9 GHz wideband transistor
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability SOT323 envelope.
DESCRIPTIONNPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
PINNING
QUICK REFERENCE DATA
Note Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG= maximum stable gain; Gmax= maximum available
gain.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
