BFS25A ,NPN 5 GHz wideband transistorFEATURES PINNING• Low current consumptionPIN DESCRIPTION• Low noise figureCode: N6handbook, 2 colum ..
BFS25A ,NPN 5 GHz wideband transistor
BFS25A ,NPN 5 GHz wideband transistor
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BFS466L6E6327 ,RF-Bipolarapplications35• Ideal for VCO modules and low noise amplifiers26• Low noise figure: TR1: 1.1dB at 1 ..
BFS469L6E6327 ,RF-Bipolarapplications35• Ideal for VCO modules and low noise amplifiers26• Low noise figure: TR1: 1.1dB at 1 ..
BSH102 ,N-channel enhancement mode MOS transistor
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BSH104 ,N-channel enhancement mode MOS transistor
BSH104 ,N-channel enhancement mode MOS transistor
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BFS25A
NPN 5 GHz wideband transistor
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
FEATURES Low current consumption Low noise figure Gold metallization ensures
excellent reliability SOT323 envelope.
DESCRIPTIONNPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
THERMAL RESISTANCE
Note Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS =25 °C, unless otherwise specified.
Note GUM is the maximum unilateral power gain, assuming S12 is zero andUM 10 log S2111– 1S22– -------------------------------------------------------------- dB.=
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG= maximum stable gain; Gmax= maximum available
gain.
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A