BFS17S ,RF-BipolarBFS17SNPN Silicon RF Transistor45
BFS17S
RF-Bipolar
BFS17S
NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
EHA0719621B2E1B1
TR1
TR2
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFS17S
Electrical Characteristics a TA = 25°C, unless otherwise specified.
DC characteristics
BFS17S
AC characteristics
BFS17S
Total power dissipation Ptot = f (TS)
20
40
60
80
100
120
140
160
180
200
220
240
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10 10
tot
ax
/ P
totDC
BFS17S
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.3
Transition frequency fT = f (IC) CE = Parameter
0.0
0.5
1.0
1.5
2.0
3.0
:
www.ic-phoenix.com
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