BFS17LT1 ,RF TRANSISTOR NPN SILICONTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation, T = 25°C P 350 mWA D ..
BFS17P ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 15 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-bas ..
BFS17S ,RF-BipolarBFS17SNPN Silicon RF Transistor45
BFS17LT1
RF TRANSISTOR NPN SILICON
The RF Line--
Designed primarily for use in high–gain, low–noise amplifier, oscillator and
mixer applications. Packaged for thick or thin film circuits using surface mount
components. T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICSNOTE:
