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Partno	Mfg	Dc	Qty	Available	Descript
BFS17AR	VISHAY	N/a	3000	avai	Silicon NPN Planar RF Transistor
BFS17AR	NXP	N/a	9000	avai	Silicon NPN Planar RF Transistor
BFS17AW	NXP/PHILIPS	N/a	3000	avai	Silicon NPN Planar RF Transistor

BFS17AR ,Silicon NPN Planar RF TransistorRev. 4, 20-Jan-99 1 (10)BFS17A/BFS17AR/BFS17AWVishay SemiconductorsMaximum Thermal ResistanceT = 25 ..
BFS17AR ,Silicon NPN Planar RF TransistorRev. 4, 20-Jan-99 3 (10)BFS17A/BFS17AR/BFS17AWVishay SemiconductorsS11 S21 S12 S22LIN LIN LIN LINV ..
BFS17AW ,Silicon NPN Planar RF Transistor Document Number 850392 (10) Rev. 4, 20-Jan-99BFS17A/BFS17AR/BFS17AWVishay SemiconductorsCommon Emi ..
BFS17LT1 ,RF TRANSISTOR NPN SILICONTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation, T = 25°C P 350 mWA D ..
BFS17P ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 15 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-bas ..
BFS17S ,RF-BipolarBFS17SNPN Silicon RF Transistor45

BFS17AR -BFS17AW
Silicon NPN Planar RF Transistor
BFS17A/BFS17AR/BFS17AW
Vishay Semiconductors
www.vishay.com
Document Number 85039
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band, low noise, small signal amplifiers up to
UHF frquencies, high speed logic applications and os-
cillator applications.
Features Low noise figure High power gain Small collector capacitance
94 9280
BFS17A Marking: E2
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter 3
BFS17AR Marking: E5
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 652 13 570
BFS17AW Marking: WE2
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified

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