BFR949T ,RF-BipolarBFR949TNPN Silicon RF Transistor3
BFR949T
RF-Bipolar
NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA fT = 9 GHz
F = 1.0 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR949T
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
BFR949T
AC characteristics (verified by random sampling)Gms = |S21 / S12|Gma = |S21 / S12| (k-(k2-1)1/2)
BFR949T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:EHA07524C1 = 0.762nH2 = 0.706nH3 = 0.382nH1 = 62fF2 = 84fF3 = 180fF4 = 7fF5 = 40fF6 = 48fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM
or see Internet: http://www.infineon.com/silicondiscretes
BFR949T
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
BFR949T
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.1
0.2
0.3
0.4
0.6
Transition frequency fT = f (IC) CE = Parameter
10
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
13
16
22
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
16
