BFR92T ,RF-BipolarBFR92TNPN Silicon RF TransistorPreliminary data3
BFR92T
RF-Bipolar
NPN Silicon RF Transistor
Preliminary data For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA Complementary type: BFT92T (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR92T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFR92T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k2-1)1/2)
BFR92T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFR92T
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
BFR92T
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.2
0.4
0.8
Transition frequency fT = f (IC) CE = Parameter
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
-2
10
14
22
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
-6
-3
12
