BFR505T ,NPN 9 GHz wideband transistorAPPLICATIONSLow power amplifiers, oscillators and Fig.1 SOT416.mixers particularly in RF portable ..
BFR53 ,NPN 2 GHz wideband transistor
BFR53 ,NPN 2 GHz wideband transistor
BFR53 ,NPN 2 GHz wideband transistor
BFR53 ,NPN 2 GHz wideband transistor
BFR53 ,NPN 2 GHz wideband transistor
BSC0902NS , n-Channel Power MOSFET
BSC0906NS , n-Channel Power MOSFET
BSC0908NS , n-Channel Power MOSFET
BSC0909NS , n-Channel Power MOSFET
BSC090N03MS G , OptiMOS™3 M-Series Power-MOSFET
BSC090N03MSG , OptiMOS™3 M-Series Power-MOSFET
BFR505T
NPN 9 GHz wideband transistor
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability SOT416 (SC-75) package.
APPLICATIONSLow power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
DESCRIPTIONNPN transistor in a plastic SOT416
(SC-75) package.
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).
Note Ts is the temperature at the soldering point of the collector pin.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
THERMAL RESISTANCE
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
CHARACTERISTICS =25 C; unless otherwise specified.
Notes GUM is the maximum unilateral power gain, assuming S12 is zero and IC =5 mA; VCE =6V; RL =50 ; f= 900 MHz; Tamb =25 C; fp =900 MHz; fq= 902 MHz; measured at
f(2p-q)= 898 MHz and at f(2q-p) =904 MHz.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
