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Partno	Mfg	Dc	Qty	Available	Descript
BFR505	NXP/PHILIPS	N/a	3000	avai	NPN 9 GHz wideband transistor

BFR505 ,NPN 9 GHz wideband transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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BFR505
NPN 9 GHz wideband transistor
1. Product profile
1.1 General description
The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the
RF front end in wideband applications in the GHz range, such as analog and digital
cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers
and satellite TV tuners (SATV).
The transistor is encapsulated in a plastic SOT23 envelope.
1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
1.3 Quick reference data
BFR505
NPN 9 GHz wideband transistor
Rev. 4 — 7 September 2011 Product data sheet
Table 1. Quick reference data
VCBO collector-base
voltage
open emitter - - 20 V
VCES collector-emitter voltage RBE = 0 -- 15 V DC collector
current 18 mA
Ptot total power
dissipation
up to Ts = 135 C [1] -- 150 mW
hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250
Cre feedback capacitance IC = ic = 0 A; VCB = 6 V; f = 1 MHz - 0.3 - pF transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz - 9 - GHz
GUM maximum unilateral
power gain
IC = 5 mA; VCE = 6 V;
Tamb = 25 C; f = 900 MHz
-17 -dB
IC = 5 mA; VCE = 6 V;
Tamb = 25 C; f = 2 GHz
-10 -dB
S212 insertion power gain IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz 13 14 - dB
NXP Semiconductors BFR505
NPN 9 GHz wideband transistor
[1] Ts is the temperature at the soldering point of the collector tab.
2. Pinning information
3. Ordering information
4. Marking
[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China. noise figure s = opt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 C; f = 900 MHz
-1.2 1.7 dB
s = opt; IC = 5 mA; VCE = 6 V;
Tamb = 25 C; f = 900 MHz
-1.6 2.1 dB
s = opt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 C; f = 2 GHz
-1.9 -dB
Table 1. Quick reference data …continued
Table 2. Discrete pinning
Table 3. Ordering information
BFR505 - plastic surface mounted package; 3 leads SOT23
Table 4. Marking table
BFR505 31*
NXP Semiconductors BFR505
NPN 9 GHz wideband transistor
5. Limiting values
[1] Ts is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
[1] Ts is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 20 V
VCES collector-emitter voltage RBE = 0 -15 V
VEBO emitter-base voltage - 2.5 V DC collector current continuous - 18 mA
Ptot total power dissipation up to Ts = 135 C [1] -150 mW
Tstg storage temperature 65 +150 C junction temperature - 175 C
Table 6. Thermal characteristics
Rth(j-s) from junction to soldering point [1] 260 K/W
Table 7. Characteristics
Tj = 25 C unless otherwise specified.
ICBO collector cut-off current IE = 0 A; VCB = 6 V --50 nA
hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 emitter capacitance IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
-0.4 - pF collector capacitance IE = ie = 0 A; VCB = 6 V;
f = 1 MHz
-0.4 - pF
Cre feedback capacitance IC = ic = 0 A; VCB = 6 V;
f = 1 MHz
-0.3 - pF transition frequency IC = 5 mA; VCE = 6 V;
f=1GHz - GHz
GUM maximum unilateral
power gain
IC = 5 mA; VCE = 6 V;
Tamb = 25 C; f = 900 MHz
[1] -17 - dB
IC = 5 mA; VCE = 6 V;
Tamb = 25 C; f = 2 GHz
-10 - dB
S212 insertion power gain IC = 5 mA; VCE = 6 V;
Tamb = 25 C; f = 900 MHz 14 - dB
NXP Semiconductors BFR505
NPN 9 GHz wideband transistor
[1] GUM is the maximum unilateral power gain, assuming S12 is zero and
[2] IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz
and f(2qp) = 904 MHz. noise figure s = opt; IC = 5 mA;
VCE = 6 V;Tamb = 25 C;
f = 900 MHz
-1.2 1.7 dB
s = opt; IC = 5 mA;
VCE = 6 V;
Tamb = 25 C; f = 900 MHz
-1.6 2.1 dB
s = opt; IC = 5 mA;
VCE = 6 V;
Tamb = 25 C; f = 2 GHz
-1.9 - dB
PL1 output power at 1 dB
gain compression
IC = 5 mA; VCE = 6 V;
RL = 50 ;
Tamb = 25 C; f = 900 MHz - dBm
ITO third order intercept
point
[2] -10 - dBm
Table 7. Characteristics …continued
Tj = 25 C unless otherwise specified.
NXP Semiconductors BFR505
NPN 9 GHz wideband transistor
NXP Semiconductors BFR505
NPN 9 GHz wideband transistor
NXP Semiconductors BFR505
NPN 9 GHz wideband transistor

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