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Partno	Mfg	Dc	Qty	Available	Descript
BFR460L3	INFINEON	N/a	12000	avai	ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages

BFR460L3 ,ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packagesapplications• Ideal for VCO modules and low noise amplifiers3• Low noise figure: 1.1 dB at 1.8 GHz1 ..
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BFR460L3
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages
BFR460L3
NPN Silicon RF Transistor
Preliminary data
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• World's smallest SMD leadless package
• Excellent ESD performance
typical value > 1500V (HBM)
• High fT of 22 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistancePtot due to Maximum RatingsTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR460L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Characteristics
BFR460L3
AC Characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12IP3 value depends on termination of all intermodulation frequency components.
BFR460L3
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0.1
0.2
0.3
0.4
0.5
0.6
0.8
Transition frequency fT= ƒ(IC)
f = 1 GHzCE = parameter in V
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26
Power gain Gma, Gms, |S21|2 = ƒ (f)CE = 3 V, IC = 20 mA
10
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Power gain Gma, Gms = ƒ (IC)CE = 3V
f = parameter in GHz
10
12
14
16
18
20
24
BFR460L3
Power gain Gma, Gms = ƒ (VCE)C = 20 mA
f = parameter in GHz
10
12
14
16
18
20
24

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