BFR360T ,RF-BipolarBFR360TNPN Silicon RF Transistor3Preliminary data
BFR360T
RF-Bipolar
NPN Silicon RF TransistorPreliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR360T
Characteristics
BFR360T
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2)IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
BFR360T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:NF =1-
ISE =150fA
NR =1-
ISC =20fA
IRB =74µA
RC =0.35-
MJE =0.5-
VTF =0.198V
CJC =473fF
XCJC =0.129-
VJS =0.75V
EG =1.11eV
NK =0.5K
IS =0.0689fA
VAF =20V
NE = 2.4-
VAR =60V
NC =1.4-
RBM =7.31-
CJE =400fF
TF =9.219ps
ITF =1.336mA
VJC =0.864V
TR =1.92ns
MJS =0-
XTI =0-
AF =1-
BF =147-
IKF =77.28mA
BR =6-
IKR =0.3A
RB =0.1-
RE =78.2m
VJE =1.3V
XTF =0.115-
PTF =0deg
MJC =0.486-
CJS =0fF
XTB =0-
FC =0.954
KF =1E-14
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:1 =0.762nH2 =0.706nH3 =0.382nH1 =62fF2 =84fF3 =180fF4 =7fF5 =40fF48fF
EHA07524CC
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
:
www.ic-phoenix.com
.
