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BFR360L3 from INFINEON

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BFR360L3

Manufacturer: INFINEON

RF-Bipolar

Partnumber Manufacturer Quantity Availability
BFR360L3 INFINEON 1185000 In Stock

Description and Introduction

RF-Bipolar The BFR360L3 is a RF transistor manufactured by Infineon. Below are its key specifications:

- **Type**: NPN Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)
- **Frequency Range**: Up to 5.5 GHz
- **Collector-Emitter Voltage (VCE)**: 3 V
- **Collector Current (IC)**: 30 mA
- **Power Dissipation (Ptot)**: 300 mW
- **Gain (hFE)**: 80 (typical)
- **Noise Figure**: 1.2 dB (typical at 2 GHz)
- **Package**: SOT-363 (SC-70-6)
- **Applications**: Low-noise amplifiers (LNA), RF amplification in wireless communication systems

For exact performance curves and detailed electrical characteristics, refer to the official Infineon datasheet.

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