BFR360L3 ,RF-BipolarBFR360L3NPN Silicon RF TransistorPreliminary data
BFR360L3
RF-Bipolar
BFR360L3
NPN Silicon RF TransistorPreliminary data Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR360L3
Characteristics
BFR360L3
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2)IP3 value depends on termination of all intermodulation frequency components.
BFR360L3
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:NF =1-
ISE =150fA
NR =1-
ISC =20fA
IRB =74µA
RC =0.35-
MJE =0.5-
VTF =0.198V
CJC =473fF
XCJC =0.129-
VJS =0.75V
EG =1.11eV
NK =0.5K
IS =0.0689fA
VAF =20V
NE = 2.4-
VAR =60V
NC =1.4-
RBM =7.31-
CJE =400fF
TF =9.219ps
ITF =1.336mA
VJC =0.864V
TR =1.92ns
MJS =0-
XTI =0-
AF =1-
BF =147-
IKF =77.28mA
BR =6-
IKR =0.3A
RB =0.1-
RE =78.2m
VJE =1.3V
XTF =0.115-
PTF =0deg
MJC =0.486-
CJS =0fF
XTB =0-
FC =0.954
KF =1E-14
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:L1 =0.575nH
L2 =0.575nH
L3 =0.275nH
C1 =33fF2 =28fF
C3 =131fF
C4 =8fF5 =8fF
C6 =24fF
C7 =300fF1 =204-
EHA07536CC
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
:
www.ic-phoenix.com
.
