BFR30 ,N-channel FETAPPLICATIONS12• Low level general purpose amplifiers in thick andthin-film circuits.Top view MAM385 ..
BFR30 ,N-channel FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFR31 ,N-channel field-effect transistorsAPPLICATIONS Low level general purpose amplifiers in thick and 12thin-film circuits.Top view MAM38 ..
BFR340F ,RF-BipolarBFR340FNPN Silicon RF TransistorPreliminary data
BFR30
N-channel field-effect transistors
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTIONPlanar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
Note Drain and source are interchangeable.
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Mounted on a ceramic substrate of 8×10× 0.7 mm.
THERMAL CHARACTERISTICS
Note Mounted on a ceramic substrate of 8×10× 0.7 mm.
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
