BFR193 ,RF-BipolarcharacteristicsV 12 - - VCollector-emitter breakdown voltage (BR)CEOI = 1 mA, I = 0 C BI - - 100 µA ..
BFR193W ,RF-BipolarBFR193WNPN Silicon RF Transistor3
BFR193
RF-Bipolar
BFR193
NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
F = 1.3 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR193
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFR193
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k2-1)1/2)
BFR193
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFR193
Total power dissipation Ptot = f (TS)
100
200
300
400
600
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
BFR193
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.3
Transition frequency fT = f (IC) CE = Parameter
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
16
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
