BFR183 ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFR183 ,RF-BipolarBFR183NPN Silicon RF Transistor3
BFR183
RF-Bipolar
BFR183
NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA fT = 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR183
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFR183
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k2-1)1/2)
BFR183
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFR183
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
350
400
500
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFR183
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
Transition frequency fT = f (IC) CE = Parameter
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
14
16
20
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
12
