BFP93A ,NPN Silicon RF Transistor for low dis...BFP 93ANPN Silicon RF Transistor3
BFP93A
NPN Silicon RF Transistor for low dis...
BFP 93A
NPN Silicon RF Transistor For low distortion broadband amplifier and
oscillators up to 2GHz at collector currents from
5 mA to 30 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
BFP 93A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFP 93A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)
BFP 93A
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG
Package Equivalent Circuit:
BFP 93A
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
50
100
150
200
250
300
400
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFP 93A
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
Transition frequency fT = f (IC) CE = Parameter
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
14
16
20
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
14
