BFP740 ,Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Packageapplications• Outstanding noise figure F = 0.5 dB at 1.8 GHz VPS056051 Outstanding noise figure F ..
BFP740F ,Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 PackageapplicationsTSFP-4• Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0 ..
BFP740F ,Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 PackageCharacteristics4 4.7 - VCollector-emitter breakdown voltage V(BR)CEOI = 1 mA, I = 0 C B- - 30 µACol ..
BFP740F E6327 , NPN Silicon Germanium RF Transist
BFP740FE6327 , NPN Silicon Germanium RF Transist
BFP740FESD , Robust High Performance Low Noise Bipolar RF Transistor
BS-A515RD , 14.20mm (0.56) high single digit seven segments display.
BS-A532RD , SINGLE DIGIT LED DISPLAYS
BS-A532RD , SINGLE DIGIT LED DISPLAYS
BS-A536RD , SINGLE DIGIT LED DISPLAYS
BS-A556RD , 0.56(14.20MM)single DIGIT LED DISPLAY
BS-A565RE , SINGLE DIGIT LED DISPLAYS
BFP740
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
BFP740
NPN Silicon Germanium RF Transistor*• High gain ultra low noise RF transistor
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
Gms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology
*Short-term description
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum RatingsTS is measured on the collector lead at the soldering point to the pcb
BFP740
Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP740
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|IP3 value depends on termination of all intermodulation frequency components.
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