BFP650 ,Digital TransistorsBFP650NPN Silicon Germanium RF Transistor3Preliminary data4• For high power amplifiers• Ideal for l ..
BFP650E6327 ,NPN Silicon Germanium RF TransistorBFP650NPN Silicon Germanium RF Transistor3Preliminary data4
BFP650
Digital Transistors
BFP650
NPN Silicon Germanium RF TransistorPreliminary data
• For high power amplifiers
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP650
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
BFP650
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2)IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
BFP650
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:IS =0.61fA
VAF =1000V
NE = 2-
VAR =2V
NC =1.8-
RBM =0.895Ω
CJE =682.5fF
TF =1.9ps
ITF =1.25A
VJC =0.6V
TR =0.2ns
MJS =0.27-
XTI =3-
AF =2-
TITF1-0.0065-
NF =1.025-
ISE =62fA
NR =1-
ISC =700fA
IRB =4.548mA
RC =1.006Ω
MJE =0.3-
VTF =1.5V
CJC =204.6fF
XCJC =1-
VJS =0.6V
EG =1.078eV
TNOM298K
BF =450-
IKF =0.47A
BR =42-
IKR =18mA
RB =1.036Ω
RE =0.2-
VJE =0.8V
XTF =10-
PTF =0deg
MJC =0.5-
CJS =294.9fF
XTB =-1.42-
FC =0.8
KF =2.441E-11
TITF21.0E-5
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:LBC =50pH
LCC =50pH
LEC =4pH
LBB =554.6pH
LCB =606.9pH
LEB =138.7pH
CBEC =327.6fF
CBCC =171.4fF
CES =490fF
CBS =120fF
CCS =135fF
CBCO =7.5fF
CCEO =112.6fF
CBEO =121.5fF
CCEI =5.7fF
CBEI =6.9Ω
RBS =710Ω
RCS =710Ω
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
BFP650
Total power dissipation Ptot = ƒ(TS)
50
100
150
200
250
300
350
400
450
550
tot
Permissible Pulse Load RthJS = ƒ(tp)
10 0 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
10 0 10 10 10
totmax
totDC
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0.1
0.2
0.3
0.4
0.5
0.6
0.8
BFP650
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)CE = parameter, f = 1.8 GHz
12
15
18
21
24
27
33
Transition frequency fT= ƒ(IC)
f = 1GHzCE = parameter
10
15
20
25
30
40
Power gain Gma, Gms = ƒ(IC)CE = 3V
f = parameter
10
12
14
16
18
20
22
24
26
30
Power Gain Gma, Gms = ƒ(f),21|² = f (f)CE = 3V, IC = 80mA
10
15
20
25
30
35
40
45
55
