BFP640 ,Digital Transistorsapplications VPS056051• Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure ..
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BFP640H6327 , NPN Silicon Germanium RF Transistor
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BFP640
Digital Transistors
BFP640
NPN Silicon Germanium RF Transistor
BFP640E/L6327 and E/L7764• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
• L6327 and L7764 are early Pb-free
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum RatingsTS is measured on the collector lead at the soldering point to the pcb
BFP640
Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP640
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|IP3 value depends on termination of all intermodulation frequency components.
BFP640
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:IS =0.22fA
VAF =1000V
NE = 2-
VAR =2V
NC =1.8-
RBM =2.707Ω
CJE =227.6fF
TF =1.8ps
ITF =0.4A
VJC =0.6V
TR =0.2ns
MJS =0.27-
XTI =3-
AF =2-
TITF1-0.0065-
NF =1.025-
ISE =21fA
NR =1-
ISC =400fA
IRB =1.522mA
RC =3.061Ω
MJE =0.3-
VTF =1.5V
CJC =67.43fF
XCJC =1-
VJS =0.6V
EG =1.078eV
TNOM298K
BF =450-
IKF =0.15A
BR =55-
IKR =3.8mA
RB =3.129Ω
RE =0.6-
VJE =0.8V
XTF =10-
PTF =0deg
MJC =0.5-
CJS =93.4fF
XTB =-1.42-
FC =0.8
KF =7.291E-11
TITF21.0E-5
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:LBC =120pH
LCC =120pH
LEC =20pH
LBB =696.2pH
LCB =682.4pH
LEB =230.6pH
CBEC =98.4fF
CBCC =55.9fF
CES =180fF
CBS =79fF
CCS =75fF
CCEO =131.2fF
CBEO =102.5fF
CCEI =112.6fF
CBEI =180.4fF
RBS =1200Ω
RCS =1200Ω
RES =300Ω
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
BFP640
Total power dissipation Ptot = ƒ(TS)
20
40
60
80
100
120
140
160
180
220
tot
Permissible Pulse Load RthJS = ƒ(tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
10 0 10 10
totmax
totDC
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0.05
0.1
0.15
0.25
BFP640
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)CE = parameter, f = 1.8 GHz
12
15
18
21
24
30
Transition frequency fT= ƒ(IC)
f = 1GHzCE = parameter
10
15
20
25
30
35
45
Power gain Gma, Gms = ƒ(IC)CE = 3V
f = parameter
10
12
14
16
18
20
22
24
26
30
Power Gain Gma, Gms = ƒ(f),21|² = f (f)CE = 3V, IC = 30mA
10
15
20
25
30
35
40
45
55
