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BFP540
RF-Bipolar
BFP540
NPN Silicon RF Transistor• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding Gms = 21 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET
45 - Line
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP540
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
BFP540
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|IP3 value depends on termination of all intermodulation frequency components.
BFP540
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:IS =82.84aA
VAF =28.383V
NE = 3.19-
VAR =19.705V
NC =1.172-
RBM =1.3Ω
CJE =1.8063fF
TF =6.76ps
ITF =1mA
VJC =0.81969V
TR =2.324ns
MJS =0-
XTI =3-
NF =1-
ISE =11.15fA
NR =1-
ISC =19.237aA
IRB =0.72983mA
RC =4Ω
MJE =0.46576-
VTF =0.23794V
CJC =234fF
XCJC =0.3-
VJS =0.75V
EG =1.11eV
TNOM300K
BF =107.5-
IKF =0.48731A
BR =5.5-
IKR =0.02A
RB =5.4Ω
RE =0.31111-
VJE =0.8051V
XTF =0.4219-
PTF =0deg
MJC =0.30232-
CJS =0fF
XTB =0-
FC =0.73234
All parameters are ready to use, no scalling is necessary.BI =0.47nHBO =0.53nHEI =0.23nHEO =0.05nHCI =0.56pHEO =0.58nHBE =136fFCB =6.9fF134fF
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
For non-linear simulation:• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
• Simulation of the package is not necessary for frequencies < 100MHz.
BFP540
Total power dissipation Ptot = ƒ(TS)
50
100
150
200
300
tot
Permissible Pulse Load RthJS = ƒ(tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
10 0 10 10
totmax
totDC
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0.05
0.1
0.2
BFP540
Transition frequency fT= ƒ(IC)
f = 1GHzCE = Parameter in V
10
15
20
25
35
Power gain Gma, Gms = ƒ(IC)CE = 2V
f = Parameter in GHz
10
15
20
30
Power Gain Gma, Gms = ƒ(f),21|² = f (f)CE = 2V, IC = 20mA
10
15
20
25
30
35
40
50
Power gain Gma, Gms = ƒ (VCE)C = 20mA
f = Parameter in GHz
10
15
20
30
