BFP520F ,RF-Bipolar
BFP520F
RF-Bipolar
SIEGET45BFP520F
NPN Silicon RF Transistor
Preliminary data For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding G
ms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz Transition frequency fT = 45 GHz Gold metallization for high reliability SIEGET
45 - Line 45 GHz fT - Line
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ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SIEGET45BFP520F
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics (verified by random sampling)Gms = |S21 / S12|IP3 value depends on termination of all intermodulation frequency components. Termination used for this
SIEGET45BFP520F
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataBO = 0.22nH = 0.28nHCO = 0.22nH0.10-0.01-0.11-BE = 34fFBC =2fFCE = 33fFBI = 0.42nHLBI =0.15-EI = 0.26nHLEI =0.11-CI = 0.35nHLCI =0.13-
KCI-EI =-0.05-
KBI-CI =-0.08-
KBI-EI =0.20-
The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection. LxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between
the inductances Lxa and Lyb. The referencepins for the coupled ports are B, E, C, B`, E`, C`.
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
:
www.ic-phoenix.com
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