BFP520 ,RF-BipolarCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BFP520 ,RF-Bipolar
BFP520
RF-Bipolar
BFP520SIEGET45
NPN Silicon RF Transistor For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding G
ms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz Transition frequency fT = 45 GHz Gold metallization for high reliability SIEGET
45 - Line 45 GHz fT - Line
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP520SIEGET45
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics (verified by random sampling)
BFP520SIEGET45
Common Emitter S-ParametersCE = 2 V, /C = 20 mA
Common Emitter Noise ParametersCE = 2 V, IC = 2 mACE = 2 V, IC = 5 mA
1) Input matched for minimum noise figure, output for maximum gain 2) ZS = ZL = 50
For more and detailed S- and Noise-parameters please contact your local Infineon Technologies
BFP520SIEGET45
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
Package Equivalent Circuit:The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
BFP520SIEGET45
For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. Simulation of the package is not necessary for frequencies < 100MHz.
For higher frequencies please add the wiring of the package equivalent circuit
around the non-linear transistor.
Advantages of the common emitter configuration: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted
on the copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
BFP520SIEGET45
Total power dissipation Ptot = f (TS)
10
20
30
40
50
60
70
80
90
100
120
tot
Transition frequency fT = f (IC)
f = 2 GHzCE = parameter in V
12
16
20
24
28
32
36
40
44
52
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10
totmax
/ P
totDC
Permissible Pulse Load RthJS = f (tp)
10 0 10 10
thJS
