BFP460 ,ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packagesapplications• Ideal for VCO modules and low noise amplifiers• Low noise figure: 1.1 dB at 1.8 GHz2• ..
BFP520 ,RF-BipolarCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BFP520 ,RF-Bipolar
BFP460
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages
BFP460
NPN Silicon RF Transistor*• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
typical value > 1500V (HBM)
• High fT of 22 GHz
* Short-term description
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistancePtot due to Maximum RatingsTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP460
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
BFP460
AC Characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12IP3 value depends on termination of all intermodulation frequency components.
BFP460
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
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Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)CE = parameter, f = 1800MHz -
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Transition frequency fT= ƒ(IC)
f = 1 GHzCE = parameter in V
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Power gain Gma, Gms, |S21|2 = ƒ (f)CE = 3 V, IC = 20 mA
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BFP460
Power gain Gma, Gms = ƒ (IC)CE = 3V
f = parameter in GHz
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Power gain Gma, Gms = ƒ (VCE)C = 20 mA
f = parameter in GHz
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