BFP450 ,RF-Bipolar
BFP450
RF-Bipolar
BFP450SIEGET25
NPN Silicon RF Transistor For medium power amplifiers Compression point P-1dB = +19 dBm at 1.8 GHz
maximum available gain Gma
Noise figure F = 1.25 dB at 1.8 GHz Transition frequency fT = 24 GHz Gold metallization for high reliability SIEGET
25 GHz fT - Line
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the emitter lead at the soldering point to the pcb
BFP450SIEGET25
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics (verified by random sampling)
BFP450SIEGET25
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies
BFP450SIEGET25
For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter. Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note: This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
EHA07307
Transistor Schematic DiagramThe common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
Common Emitter S- and Noise-parameter
For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
BFP450SIEGET25
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
350
400
500
tot
Transition frequency fT = f (IC)
f = 1 GHzCE = parameter in V
10
12
14
16
18
20
22
24
28
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10
totmax
/ P
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
BFP450SIEGET25
Power gain Gma, Gms = f (IC)CE = 2V
f = parameter in GHz
10
12
14
16
18
20
22
24
28
Power gain Gma, Gms, |S21|2 = f ( f )CE = 2V, IC = 50 mA
12
16
20
24
28
32
36
40
48
Power gain Gma, Gms = f (VCE)C = 50 mA
f = Parameter in GHz
10
12
14
16
18
20
22
26
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.2
0.4
0.6
0.8
1.2
